-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 88A I(D), 200V, 0.0107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPB107N20N3GATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
2432725
|
Farnell | MOSFET, N CH, 200V, 88A, TO-263-3 RoHS: Compliant Min Qty: 1 Lead time: 17 Weeks, 1 Days Container: Cut Tape | 745 |
|
$4.4199 / $6.1321 | Buy Now |
DISTI #
2432725RL
|
Farnell | MOSFET, N CH, 200V, 88A, TO-263-3 RoHS: Compliant Min Qty: 50 Lead time: 17 Weeks, 1 Days Container: Reel | 745 |
|
$4.4199 / $4.8446 | Buy Now |
DISTI #
4318825
|
Farnell | MOSFET, N-CH, 200V, 88A, TO-263 RoHS: Compliant Min Qty: 1000 Lead time: 17 Weeks, 1 Days Container: Reel | 0 |
|
$4.0615 / $4.3270 | Buy Now |
DISTI #
IPB107N20N3GATMA1CT-ND
|
DigiKey | MOSFET N-CH 200V 88A D2PAK Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
925 In Stock |
|
$2.4610 / $5.3700 | Buy Now |
DISTI #
IPB107N20N3GATMA1
|
Avnet Americas | Power MOSFET, N Channel, 200 V, 88 A, 0.0096 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: IPB107N20N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$2.2779 / $2.3960 | Buy Now |
DISTI #
726-IPB107N20N3GATMA
|
Mouser Electronics | MOSFETs N-Ch 200V 88A D2PAK-2 OptiMOS 3 RoHS: Compliant | 4708 |
|
$2.4600 / $4.9300 | Buy Now |
DISTI #
E02:0323_00822646
|
Arrow Electronics | Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks Date Code: 2435 | Europe - 29000 |
|
$2.4426 | Buy Now |
DISTI #
V36:1790_06377982
|
Arrow Electronics | Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks Date Code: 2435 | Americas - 10000 |
|
$2.4540 | Buy Now |
DISTI #
V72:2272_06377982
|
Arrow Electronics | Trans MOSFET N-CH 200V 88A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2251 Container: Cut Strips | Americas - 8 |
|
$2.6430 | Buy Now |
|
Future Electronics | Single N-Channel 200 V 10.7 mOhm 65 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks Container: Reel | 2000Reel |
|
$2.4900 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IPB107N20N3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPB107N20N3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 88A I(D), 200V, 0.0107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | GREEN, PLASTIC, TO-263, 3 PIN | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 560 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 88 A | |
Drain-source On Resistance-Max | 0.0107 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 352 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IPB107N20N3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB107N20N3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IPB107N20NAATMA1 | Infineon Technologies AG | $5.2121 | Power Field-Effect Transistor, 88A I(D), 200V, 0.0107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPB107N20N3GATMA1 vs IPB107N20NAATMA1 |
IPB107N20N3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 88A I(D), 200V, 0.0107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPB107N20N3GATMA1 vs IPB107N20N3G |
IPB107N20NA | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 88A I(D), 200V, 0.0107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IPB107N20N3GATMA1 vs IPB107N20NA |
The maximum operating temperature range for IPB107N20N3GATMA1 is -40°C to 150°C.
Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good airflow around the device.
The recommended gate resistor value for IPB107N20N3GATMA1 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
Yes, IPB107N20N3GATMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
Use a suitable overvoltage protection circuit and a current sense resistor to monitor and limit the current, and consider using a fuse or a circuit breaker to protect against overcurrent conditions.