Part Details for IPB048N15N5LF by Infineon Technologies AG
Results Overview of IPB048N15N5LF by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
IPB048N15N5LF Information
IPB048N15N5LF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPB048N15N5LF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IPB048N15N5LF
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TME | Transistor: N-MOSFET, unipolar, 150V, 115A, 313W, PG-TO263-3 Min Qty: 1 | 0 |
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$5.1000 / $7.6500 | RFQ |
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Cytech Systems Limited | 1000 |
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RFQ | ||
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Vyrian | Transistors | 1242 |
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RFQ |
Part Details for IPB048N15N5LF
IPB048N15N5LF CAD Models
IPB048N15N5LF Part Data Attributes
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IPB048N15N5LF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB048N15N5LF
Infineon Technologies AG
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 30 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 150 A | |
| Drain-source On Resistance-Max | 0.0048 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 23 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 313 W | |
| Pulsed Drain Current-Max (IDM) | 600 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB048N15N5LF
This table gives cross-reference parts and alternative options found for IPB048N15N5LF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB048N15N5LF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NTBGS6D5N15MC | onsemi | $4.3671 | Power MOSFET, 150 V, 6.5 mΩ, A, Single N−Channel, D2PAK7, D2PAK-7 / TO-263-7, 800-REEL | IPB048N15N5LF vs NTBGS6D5N15MC |
| IPB048N15N5LFATMA1 | Infineon Technologies AG | $5.8508 | Power Field-Effect Transistor, 18A I(D), 150V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2 | IPB048N15N5LF vs IPB048N15N5LFATMA1 |
| IPB048N15N5 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 120A I(D), 150V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3/2 | IPB048N15N5LF vs IPB048N15N5 |
IPB048N15N5LF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for IPB048N15N5LF is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
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Proper cooling is crucial for the device's reliability and performance. Ensure good thermal contact between the device and the heat sink, and use a thermal interface material (TIM) if necessary. The device's thermal resistance (Rth) is specified in the datasheet, and you can use this value to calculate the required heat sink size and thermal interface material.
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The recommended gate drive voltage for IPB048N15N5LF is between 10V and 15V, with a maximum gate-source voltage of ±20V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
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To protect the device from overvoltage and overcurrent, use a suitable voltage regulator and overcurrent protection circuit. The datasheet specifies the maximum voltage and current ratings, and you should design your circuit to stay within these limits. Additionally, consider using a fuse or circuit breaker to protect against overcurrent conditions.
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For optimal performance and reliability, follow good PCB design practices, such as using a solid ground plane, minimizing track lengths, and using a low-inductance layout. Ensure the device is placed close to the heat sink, and use thermal vias to improve heat dissipation. The datasheet may provide specific layout recommendations, so be sure to review it carefully.