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Part Details for IPB038N12N3GATMA1 by Infineon Technologies AG
Results Overview of IPB038N12N3GATMA1 by Infineon Technologies AG
- Distributor Offerings: (21 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPB038N12N3GATMA1 Information
IPB038N12N3GATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPB038N12N3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
47W3464
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Newark | Mosfet, N Channel, 120V, 120A, To263-3, Channel Type:N Channel, Drain Source Voltage Vds:120V, Continuous Drain Current Id:120A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPB038N12N3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 635 |
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$3.6000 | Buy Now |
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DISTI #
86AK5155
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Newark | Mosfet, N-Ch, 120V, 120A, To-263 Rohs Compliant: Yes |Infineon IPB038N12N3GATMA1 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.5300 | Buy Now |
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DISTI #
IPB038N12N3GATMA1CT-ND
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DigiKey | MOSFET N-CH 120V 120A D2PAK Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2524 In Stock |
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$1.4211 / $3.6700 | Buy Now |
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DISTI #
IPB038N12N3GATMA1
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Avnet Americas | Trans MOSFET N-CH 120V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB038N12N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$1.1520 / $1.2446 | Buy Now |
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DISTI #
726-IPB038N12N3GATMA
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Mouser Electronics | MOSFETs N-Ch 120V 120A D2PAK-2 OptiMOS 3 RoHS: Compliant | 886 |
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$1.4200 / $3.6000 | Buy Now |
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DISTI #
V36:1790_06377059
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Arrow Electronics | Trans MOSFET N-CH 120V 120A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks Date Code: 2442 | Americas - 1000 |
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$1.4133 | Buy Now |
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DISTI #
V72:2272_06377059
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Arrow Electronics | Trans MOSFET N-CH 120V 120A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2204 Container: Cut Strips | Americas - 264 |
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$1.4270 / $2.0170 | Buy Now |
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Future Electronics | Single N-Channel 120 V 3.8 mOhm 158 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks Container: Reel | 1000Reel |
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$1.2900 / $1.3200 | Buy Now |
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Future Electronics | Single N-Channel 120 V 3.8 mOhm 158 nC OptiMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks Container: Reel | 0Reel |
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$1.2900 / $1.3200 | Buy Now |
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DISTI #
87548871
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Verical | Trans MOSFET N-CH 120V 120A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2442 | Americas - 445000 |
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$1.5253 | Buy Now |
Part Details for IPB038N12N3GATMA1
IPB038N12N3GATMA1 CAD Models
IPB038N12N3GATMA1 Part Data Attributes
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IPB038N12N3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB038N12N3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 120V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | GREEN, PLASTIC, TO-263, D2PAK-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 900 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 120 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0038 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IPB038N12N3GATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for IPB038N12N3GATMA1 is -55°C to 175°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
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The recommended gate resistor value for IPB038N12N3GATMA1 is between 10Ω to 100Ω, depending on the specific application and switching frequency.
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Yes, IPB038N12N3GATMA1 is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure that the device is properly cooled and the gate drive is optimized for the specific application.
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To protect the MOSFET from overvoltage and overcurrent, use a voltage clamp or a TVS diode to limit the voltage, and a current sense resistor or a fuse to detect and limit excessive current.