-
Part Symbol
-
Footprint
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for IPB026N06NATMA1 by Infineon Technologies AG
Results Overview of IPB026N06NATMA1 by Infineon Technologies AG
- Distributor Offerings: (21 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
IPB026N06NATMA1 Information
IPB026N06NATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPB026N06NATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
50Y2002
|
Newark | Mosfet, N-Ch, 60V, 100A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon IPB026N06NATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$1.0800 / $1.6000 | Buy Now |
|
DISTI #
IPB026N06NATMA1
|
Avnet Americas | Trans MOSFET N-CH 60V 100A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB026N06NATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$0.7451 / $0.8156 | Buy Now |
|
DISTI #
726-IPB026N06NATMA1
|
Mouser Electronics | MOSFETs N-Ch 60V 100A D2PAK-2 RoHS: Compliant | 1967 |
|
$0.9760 / $1.3600 | Buy Now |
|
DISTI #
E02:0323_05982820
|
Arrow Electronics | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Date Code: 2512 | Europe - 49000 |
|
$0.9897 | Buy Now |
|
DISTI #
V72:2272_06382953
|
Arrow Electronics | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2237 Container: Cut Strips | Americas - 605 |
|
$0.8735 / $0.9955 | Buy Now |
|
|
Future Electronics | IPB026N06N Series 60 V 100 A 2.6 mOhm Single N-Channel MOSFET - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Container: Reel | 1000Reel |
|
$0.8300 / $0.8700 | Buy Now |
|
|
Future Electronics | IPB026N06N Series 60 V 100 A 2.6 mOhm Single N-Channel MOSFET - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Container: Reel | 0Reel |
|
$0.8300 / $0.8700 | Buy Now |
|
DISTI #
88054774
|
Verical | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Date Code: 2512 | Americas - 49000 |
|
$0.9827 | Buy Now |
|
DISTI #
87044959
|
Verical | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R Min Qty: 228 Package Multiple: 1 Date Code: 2001 | Americas - 3222 |
|
$1.0251 / $1.6500 | Buy Now |
|
DISTI #
69267706
|
Verical | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R Min Qty: 32 Package Multiple: 1 Date Code: 2325 | Americas - 1950 |
|
$0.6210 / $0.6460 | Buy Now |
Part Details for IPB026N06NATMA1
IPB026N06NATMA1 CAD Models
IPB026N06NATMA1 Part Data Attributes
|
|
IPB026N06NATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPB026N06NATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 25A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN
|
| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | GREEN, PLASTIC, TO-263, 3/2 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 110 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 25 A | |
| Drain-source On Resistance-Max | 0.0026 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB026N06NATMA1
This table gives cross-reference parts and alternative options found for IPB026N06NATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB026N06NATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BSC028N06NSTATMA1 | Infineon Technologies AG | $0.4336 | Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 | IPB026N06NATMA1 vs BSC028N06NSTATMA1 |
| BSB028N06NN3GXUMA1 | Infineon Technologies AG | $1.7114 | Power Field-Effect Transistor, 22A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN | IPB026N06NATMA1 vs BSB028N06NN3GXUMA1 |
| IPB026N06N | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 25A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN | IPB026N06NATMA1 vs IPB026N06N |
| BSB028N06NN3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 22A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN | IPB026N06NATMA1 vs BSB028N06NN3G |
IPB026N06NATMA1 Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for IPB026N06NATMA1 is -55°C to 175°C.
-
To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V), and the gate resistance is minimized (e.g., using a low-impedance gate driver).
-
Use a compact, symmetrical layout with short, wide traces for the drain, source, and gate connections. Minimize loop areas and use a solid ground plane to reduce parasitic inductance.
-
Use a voltage clamp or TVS diode to protect against overvoltage, and consider adding a current sense resistor and overcurrent protection circuitry to prevent damage from excessive current.
-
Ensure good thermal contact between the MOSFET and a heat sink or PCB, and consider using thermal interface materials to minimize thermal resistance. Also, ensure adequate airflow or use a fan to dissipate heat.