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Part Details for IPB019N08N3GATMA1 by Infineon Technologies AG
Results Overview of IPB019N08N3GATMA1 by Infineon Technologies AG
- Distributor Offerings: (18 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPB019N08N3GATMA1 Information
IPB019N08N3GATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPB019N08N3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
60R2644
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Newark | Mosfet, N Channel, 80V, 180A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:80V, Continuous Drain Current Id:180A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon IPB019N08N3GATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 1237 |
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$3.4700 / $5.7500 | Buy Now |
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DISTI #
IPB019N08N3GATMA1
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Avnet Americas | - Tape and Reel (Alt: IPB019N08N3GATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$2.0532 / $2.1966 | Buy Now |
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DISTI #
726-IPB019N08N3GATMA
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Mouser Electronics | MOSFETs N-Ch 80V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant | 609 |
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$2.6900 / $5.5300 | Buy Now |
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DISTI #
E02:0323_00171314
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Arrow Electronics | Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks Date Code: 2446 | Europe - 4000 |
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$2.5650 | Buy Now |
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DISTI #
73928954
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RS | Transistor, OptiMOS 3 Power MOSFET, N-channel, normal level, 80V, 180A, TO263-7 Min Qty: 1 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk | 10 |
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$4.2000 / $5.6000 | Buy Now |
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Future Electronics | Single N-Channel 80 V 1.9 mOhm 155 nC OptiMOS™ Power Mosfet - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 10 Weeks Container: Reel | 115000Reel |
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$2.1900 | Buy Now |
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Future Electronics | Single N-Channel 80 V 1.9 mOhm 155 nC OptiMOS™ Power Mosfet - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 10 Weeks Container: Reel | 2000Reel |
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$2.1900 | Buy Now |
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Future Electronics | Single N-Channel 80 V 1.9 mOhm 155 nC OptiMOS™ Power Mosfet - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 10 Weeks Container: Reel | 0Reel |
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$2.1900 | Buy Now |
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DISTI #
85990651
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Verical | Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) D2PAK T/R Min Qty: 112 Package Multiple: 1 Date Code: 2201 | Americas - 38750 |
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$2.8250 / $3.3500 | Buy Now |
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DISTI #
85984554
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Verical | Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) D2PAK T/R Min Qty: 112 Package Multiple: 1 Date Code: 2301 | Americas - 33750 |
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$2.8250 / $3.3500 | Buy Now |
Part Details for IPB019N08N3GATMA1
IPB019N08N3GATMA1 CAD Models
IPB019N08N3GATMA1 Part Data Attributes
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IPB019N08N3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB019N08N3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 180A I(D), 80V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-263 | |
| Package Description | GREEN, PLASTIC, TO-263, 7 PIN | |
| Pin Count | 7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 10 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 1430 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 180 A | |
| Drain-source On Resistance-Max | 0.0019 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G6 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 720 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB019N08N3GATMA1
This table gives cross-reference parts and alternative options found for IPB019N08N3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB019N08N3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPB019N08N3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 180A I(D), 80V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TO-263, 7 PIN | IPB019N08N3GATMA1 vs IPB019N08N3G |
| STH270N8F7-6 | STMicroelectronics | Check for Price | N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package | IPB019N08N3GATMA1 vs STH270N8F7-6 |
IPB019N08N3GATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for IPB019N08N3GATMA1 is -40°C to 150°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
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The recommended gate resistor value for IPB019N08N3GATMA1 is between 10Ω and 100Ω, depending on the specific application and switching frequency.
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Yes, IPB019N08N3GATMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
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To protect the device from ESD, handle the device by the body, use an ESD wrist strap or mat, and ensure that the device is stored in an anti-static bag or container.