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Part Details for IPB010N06NATMA1 by Infineon Technologies AG
Results Overview of IPB010N06NATMA1 by Infineon Technologies AG
- Distributor Offerings: (28 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IPB010N06NATMA1 Information
IPB010N06NATMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPB010N06NATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2432724
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Farnell | MOSFET, N CH, 60V, 180A, TO-263-7 RoHS: Compliant Min Qty: 1 Lead time: 19 Weeks, 1 Days Container: Cut Tape | 219 |
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$3.7435 / $7.3543 | Buy Now |
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DISTI #
2432724RL
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Farnell | MOSFET, N CH, 60V, 180A, TO-263-7 RoHS: Compliant Min Qty: 10 Lead time: 19 Weeks, 1 Days Container: Reel | 219 |
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$3.7435 / $5.7082 | Buy Now |
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DISTI #
4318824
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Farnell | MOSFET, N-CH, 60V, 180A, TO-263 RoHS: Compliant Min Qty: 1000 Lead time: 19 Weeks, 1 Days Container: Reel | 0 |
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$3.6639 / $3.7435 | Buy Now |
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DISTI #
IPB010N06NATMA1CT-ND
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DigiKey | MOSFET N-CH 60V 45A/180A TO263-7 Min Qty: 1 Lead time: 18 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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$2.9596 / $5.8600 | Buy Now |
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DISTI #
IPB010N06NATMA1
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Avnet Americas | Power MOSFET, N Channel, 60 V, 180 A, 800 ?ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: IPB010N06NATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$2.2775 / $2.4359 | Buy Now |
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DISTI #
IPB010N06NATMA1
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Avnet Americas | Power MOSFET, N Channel, 60 V, 180 A, 800 ?ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: IPB010N06NATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
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$2.6208 / $2.6754 | Buy Now |
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DISTI #
726-IPB010N06NATMA1
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Mouser Electronics | MOSFETs N-Ch 60V 180A D2PAK-6 RoHS: Compliant | 693 |
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$3.0200 / $4.9500 | Buy Now |
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DISTI #
V72:2272_06378283
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Arrow Electronics | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2312 Container: Cut Strips | Americas - 1275 |
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$3.8140 / $4.2030 | Buy Now |
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DISTI #
V36:1790_06378283
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Arrow Electronics | Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Date Code: 2402 | Americas - 1000 |
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$2.4940 | Buy Now |
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Future Electronics | Single N-Channel 60 V 1 mOhm 208 nC OptiMOS™ Power Mosfet - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Container: Reel | 7000Reel |
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$2.5300 | Buy Now |
Part Details for IPB010N06NATMA1
IPB010N06NATMA1 CAD Models
IPB010N06NATMA1 Part Data Attributes
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IPB010N06NATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB010N06NATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 45A I(D), 60V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-7/6
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-263 | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-7/6 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 1600 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 45 A | |
| Drain-source On Resistance-Max | 0.001 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263 | |
| JESD-30 Code | R-PSSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 720 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IPB010N06NATMA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IPB010N06NATMA1 is -40°C to 150°C.
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The recommended gate resistor value for the IPB010N06NATMA1 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.
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Yes, the IPB010N06NATMA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
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The maximum allowed voltage for the IPB010N06NATMA1 is 60V, with a maximum repetitive peak voltage of 64V.
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To ensure proper cooling, the IPB010N06NATMA1 should be mounted on a heat sink with a thermal resistance of less than 10°C/W, and the maximum junction temperature should not exceed 150°C.