Part Details for IPA65R150CFD by Infineon Technologies AG
Results Overview of IPA65R150CFD by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Energy and Power Systems
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IPA65R150CFD Information
IPA65R150CFD by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPA65R150CFD
| Part # | Distributor | Description | Stock | Price | Buy | |
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Win Source Electronics | MOSFET N-CH 650V 22.4A TO220 | 15322 |
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$2.5029 / $3.7549 | Buy Now |
Part Details for IPA65R150CFD
IPA65R150CFD CAD Models
IPA65R150CFD Part Data Attributes
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IPA65R150CFD
Infineon Technologies AG
Buy Now
Datasheet
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IPA65R150CFD
Infineon Technologies AG
Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULL PACK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220 FP, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 614 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 22.4 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 34.7 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPA65R150CFD
This table gives cross-reference parts and alternative options found for IPA65R150CFD. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPA65R150CFD, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPA65R150CFDXKSA1 | Infineon Technologies AG | $2.7279 | Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULL PACK-3 | IPA65R150CFD vs IPA65R150CFDXKSA1 |
| IPA65R150CFDXKSA2 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, TO-220, FULL PACK-3 | IPA65R150CFD vs IPA65R150CFDXKSA2 |
IPA65R150CFD Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IPA65R150CFD is -40°C to 150°C, as specified in the datasheet. However, it's recommended to derate the device's power handling capability at higher temperatures to ensure reliable operation.
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To ensure proper cooling, follow the thermal design guidelines provided in the datasheet and application notes. This includes providing a sufficient heat sink, using thermal interface materials, and ensuring good airflow around the device. Additionally, consider using thermal simulation tools to optimize your design.
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Infineon provides a recommended PCB layout and design considerations in the datasheet and application notes. Key considerations include minimizing parasitic inductance, using a solid ground plane, and ensuring proper decoupling and filtering. It's also recommended to follow the guidelines for PCB layout and design provided in the Infineon Power MOSFET Application Note.
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When selecting a gate driver for the IPA65R150CFD, consider the device's gate charge, threshold voltage, and switching frequency requirements. Infineon recommends using a gate driver with a high current capability, fast rise and fall times, and a suitable input voltage range. The Infineon Gate Driver Selection Guide can be a helpful resource in selecting the correct gate driver.
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The IPA65R150CFD has built-in ESD protection, but it's still important to follow proper handling and storage precautions to prevent damage. This includes using ESD-safe materials, grounding yourself before handling the device, and avoiding excessive mechanical stress or vibration. Refer to the Infineon ESD Protection and Handling Precautions document for more information.