Part Details for IPA60R280P6 by Infineon Technologies AG
Results Overview of IPA60R280P6 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IPA60R280P6 Information
IPA60R280P6 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPA60R280P6
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPA60R280P6
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Mouser Electronics | MOSFETs N-Ch 600V 7.7A TO220FP-3 RoHS: Compliant | 106 |
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$0.8600 / $2.2700 | Buy Now |
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Vyrian | Transistors | 142 |
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RFQ | |
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Win Source Electronics | 600V, N-CHANNEL POWER MOSFET | 5000 |
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$0.9091 / $1.3636 | Buy Now |
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Wuhan P&S | 600V,13.8A,N channel Power MOSFET Min Qty: 1 | 34 |
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$1.0900 / $1.5200 | Buy Now |
Part Details for IPA60R280P6
IPA60R280P6 CAD Models
IPA60R280P6 Part Data Attributes
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IPA60R280P6
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPA60R280P6
Infineon Technologies AG
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-220FP, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 285 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 13.8 A | |
| Drain-source On Resistance-Max | 0.28 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 32 W | |
| Pulsed Drain Current-Max (IDM) | 39 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IPA60R280P6 Frequently Asked Questions (FAQ)
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The maximum junction temperature of the IPA60R280P6 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
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To ensure proper cooling, a heat sink with a thermal resistance of less than 1.5 K/W is recommended. Additionally, a thermal interface material (TIM) with a thermal conductivity of at least 5 W/mK should be used to fill the gap between the device and the heat sink.
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The recommended gate resistor value for the IPA60R280P6 is between 10 Ω and 22 Ω. A higher value can help reduce electromagnetic interference (EMI), but may also increase the turn-on time.
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Yes, the IPA60R280P6 is suitable for high-frequency switching applications up to 100 kHz. However, the device's switching characteristics, such as the rise and fall times, should be carefully evaluated to ensure that they meet the application's requirements.
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To protect the IPA60R280P6 from overvoltage and overcurrent, a voltage clamp or a transient voltage suppressor (TVS) can be used. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.