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Part Details for IPA057N08N3GXKSA1 by Infineon Technologies AG
Results Overview of IPA057N08N3GXKSA1 by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
Electronic Manufacturing
IPA057N08N3GXKSA1 Information
IPA057N08N3GXKSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IPA057N08N3GXKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
34AC1645
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Newark | Mosfet, N-Ch, 80V, 60A, To-220Fp, Transistor Polarity:N Channel, Continuous Drain Current Id:60A, Drain Source Voltage Vds:80V, On Resistance Rds(On):0.0049Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.8V, Power Rohs Compliant: Yes |Infineon IPA057N08N3GXKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$1.5900 / $3.1900 | Buy Now |
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DISTI #
448-IPA057N08N3GXKSA1-ND
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DigiKey | MOSFET N-CH 80V 60A TO220-FP Min Qty: 1 Lead time: 16 Weeks Container: Tube |
416 In Stock |
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$0.9980 / $3.1000 | Buy Now |
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DISTI #
IPA057N08N3GXKSA1
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Avnet Americas | - Rail/Tube (Alt: IPA057N08N3GXKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
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$0.8331 / $0.8763 | Buy Now |
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DISTI #
69266337
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Verical | Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant Min Qty: 26 Package Multiple: 1 Date Code: 2314 | Americas - 1500 |
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$1.1300 / $2.4400 | Buy Now |
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DISTI #
87836651
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Verical | Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant Min Qty: 221 Package Multiple: 1 Date Code: 2301 | Americas - 311 |
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$1.0505 / $1.7000 | Buy Now |
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Rochester Electronics | IPA057N08 - N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 341 |
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$0.8404 / $1.3600 | Buy Now |
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DISTI #
IPA057N08N3GXKSA1
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TME | Transistor: N-MOSFET, unipolar, 80V, 60A, 39W, TO220FP Min Qty: 1 | 0 |
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$0.8600 / $1.3300 | RFQ |
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DISTI #
IPA057N08N3GXKSA1
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IBS Electronics | SINGLE N-CHANNEL 80 V 5.7 MOHM 52 NC OPTIMOS™, POWER MOSFET - TO-220-3FP Min Qty: 500 Package Multiple: 1 | 0 |
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$1.2025 / $1.2610 | Buy Now |
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DISTI #
IPA057N08N3GXKSA1
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Chip One Stop | Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Tube | 1500 |
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$1.0300 / $2.7500 | Buy Now |
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DISTI #
SP000454442
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EBV Elektronik | Power MOSFET N Channel 80 V 60 A 00049 ohm TO220FP Through Hole (Alt: SP000454442) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPA057N08N3GXKSA1
IPA057N08N3GXKSA1 CAD Models
IPA057N08N3GXKSA1 Part Data Attributes
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IPA057N08N3GXKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPA057N08N3GXKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 60A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | GREEN, PLASTIC, TO-220FP, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 290 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.0057 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IPA057N08N3GXKSA1 Frequently Asked Questions (FAQ)
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The IPA057N08N3GXKSA1 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
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The device has a thermal pad on the bottom, which should be connected to a heat sink or a thermal interface material to ensure proper heat dissipation.
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Infineon provides a recommended PCB layout in the application note AN2013-01, which includes guidelines for thermal design, decoupling, and layout considerations.
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The IPA057N08N3GXKSA1 is rated for a maximum drain-source voltage of 80V, making it suitable for high-voltage applications such as automotive and industrial power supplies.
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The device has built-in overcurrent and overvoltage protection, but additional external protection circuits may be necessary depending on the application requirements.