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Part Details for IMZ120R060M1H by Infineon Technologies AG
Results Overview of IMZ120R060M1H by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IMZ120R060M1H Information
IMZ120R060M1H by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IMZ120R060M1H
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 36A I(D), 1200V, 0.106OHM, 1-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET, TO-247 | 220 |
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$10.8000 / $20.0000 | Buy Now |
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LCSC | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS | 108 |
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$4.1655 / $5.8719 | Buy Now |
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MacroQuest Electronics | STOCK | 4000 |
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RFQ |
Part Details for IMZ120R060M1H
IMZ120R060M1H CAD Models
IMZ120R060M1H Part Data Attributes
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IMZ120R060M1H
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IMZ120R060M1H
Infineon Technologies AG
Power Field-Effect Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 36 A | |
| Drain-source On Resistance-Max | 0.106 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6.5 pF | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T4 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 76 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |