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Part Details for IMZ120R030M1HXKSA1 by Infineon Technologies AG
Results Overview of IMZ120R030M1HXKSA1 by Infineon Technologies AG
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
Energy and Power Systems
Medical Imaging
Entertainment and Gaming
Robotics and Drones
IMZ120R030M1HXKSA1 Information
IMZ120R030M1HXKSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IMZ120R030M1HXKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
29AH1037
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Newark | Mosfet, Sic, N-Ch, 1.2Kv, 56A, To-247, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:56A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:4Pins, Rds(On) Test Voltage:18V, Power Dissipation:227W Rohs Compliant: Yes |Infineon IMZ120R030M1HXKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 592 |
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$15.0900 / $20.4200 | Buy Now |
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DISTI #
448-IMZ120R030M1HXKSA1-ND
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DigiKey | SICFET N-CH 1.2KV 56A TO247-4 Min Qty: 1 Lead time: 12 Weeks Container: Tube |
294 In Stock |
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$9.8243 / $17.0700 | Buy Now |
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DISTI #
IMZ120R030M1HXKSA1
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Avnet Americas | Transistor MOSFET N-CH 1.2kV 56A 4-Pin TO-247 Tube - Rail/Tube (Alt: IMZ120R030M1HXKSA1) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Tube | 7264 |
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$8.8022 / $9.5785 | Buy Now |
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DISTI #
726-IMZ120R030M1HXKS
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Mouser Electronics | SiC MOSFETs CoolSiC 1200V SiC Trench MOSFET in TO247-4 package RoHS: Compliant | 978 |
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$9.8200 / $15.1500 | Buy Now |
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DISTI #
E02:0323_13903138
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Arrow Electronics | Trans MOSFET N-CH SiC 1.2KV 56A 4-Pin(4+Tab) TO-247 Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2333 | Europe - 17791 |
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$8.9027 / $9.6334 | Buy Now |
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DISTI #
77260315
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Verical | Trans MOSFET N-CH SiC 1.2KV 56A 4-Pin(4+Tab) TO-247 Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 2333 | Americas - 17791 |
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$8.9528 / $9.6876 | Buy Now |
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DISTI #
69265109
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Verical | Trans MOSFET N-CH SiC 1.2KV 56A 4-Pin(4+Tab) TO-247 Tube RoHS: Compliant Min Qty: 3 Package Multiple: 1 Date Code: 2324 | Americas - 957 |
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$12.8000 / $14.5000 | Buy Now |
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DISTI #
85994858
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Verical | Trans MOSFET N-CH SiC 1.2KV 56A 4-Pin(4+Tab) TO-247 Tube RoHS: Compliant Min Qty: 30 Package Multiple: 1 Date Code: 2301 | Americas - 303 |
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$10.3250 / $12.9000 | Buy Now |
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Rochester Electronics | IMZ120R030M1H - SIC DISCRETE RoHS: Compliant Status: Active Min Qty: 1 | 303 |
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$8.2600 / $10.3200 | Buy Now |
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Future Electronics | IMZ Series 1200 V 30 mOhm 63 nC Through Hole Silicon Carbide Mosfet - TO-247-4 Min Qty: 30 Package Multiple: 30 |
330 null |
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$8.8700 / $9.0700 | Buy Now |
Part Details for IMZ120R030M1HXKSA1
IMZ120R030M1HXKSA1 CAD Models
IMZ120R030M1HXKSA1 Part Data Attributes
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IMZ120R030M1HXKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IMZ120R030M1HXKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 56A I(D), 1200V, 0.056ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 56 A | |
| Drain-source On Resistance-Max | 0.056 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 13 pF | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T4 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 227 W | |
| Pulsed Drain Current-Max (IDM) | 150 A | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |
Alternate Parts for IMZ120R030M1HXKSA1
This table gives cross-reference parts and alternative options found for IMZ120R030M1HXKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IMZ120R030M1HXKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IMZ120R030M1H | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, | IMZ120R030M1HXKSA1 vs IMZ120R030M1H |
| IMW120R030M1H | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, | IMZ120R030M1HXKSA1 vs IMW120R030M1H |
Resources and Additional Insights for IMZ120R030M1HXKSA1
Reference Designs related to IMZ120R030M1HXKSA1
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11 kW SiC bi-directional DC/DC converter board for EV Charging and ESS applications
The REF-DAB11KIZSICSYS is a CLLC resonant DC/DC converter board able to provide up to 11 kW at 800 V output voltage. With its highly efficient bi-directional power flow capability and soft switching characteristics it is the ideal building block to speed up the fast prototyping of any EV and ESS charger project.<p>This reference design provides a complete set of design files which is based on fully characterized hardware (not for sale yet). It proves that CoolSiC™ MOSFETs like the featured IMZ120R030M1H driven by 1EDC20I12AH are the perfect choice to combine cost-effective power density with highest reliability.
IMZ120R030M1HXKSA1 Frequently Asked Questions (FAQ)
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Infineon recommends a PCB layout with a large copper area for heat dissipation, and a thermal via array under the device to improve heat transfer. A minimum of 2oz copper thickness is recommended.
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Ensure proper heat sinking, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/mK, and follow the recommended PCB layout guidelines. Also, consider using a thermocouple to monitor the device temperature.
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The maximum allowed voltage transient on the input pins is 20% above the maximum recommended operating voltage, but not exceeding 40V. Exceeding this may cause damage to the device.
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Yes, the IMZ120R030M1HXKSA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems. However, additional testing and validation may be required depending on the specific application.
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Follow standard ESD handling procedures, such as using ESD-safe workstations, wrist straps, and packaging materials. Ensure that the device is stored in its original packaging or an ESD-safe container when not in use.