Datasheets
IMBG65R022M1HXTMA1 by: Infineon Technologies AG

Part Details for IMBG65R022M1HXTMA1 by Infineon Technologies AG

Results Overview of IMBG65R022M1HXTMA1 by Infineon Technologies AG

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IMBG65R022M1HXTMA1 Information

IMBG65R022M1HXTMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IMBG65R022M1HXTMA1

Part # Distributor Description Stock Price Buy
DISTI # 26AK5704
Newark Sic Mosfet, N-Ch, 650V, 64A, To-263-7, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:64A, Drain Source Voltage Vds:650V, No. Of Pins:7Pins, Rds(On) Test Voltage:18V, Power Dissipation:300W Rohs Compliant: Yes |Infineon IMBG65R022M1HXTMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 839
  • 1 $14.5500
  • 10 $10.2500
  • 25 $9.5400
  • 50 $8.8300
  • 100 $8.1200
  • 250 $8.0800
  • 500 $8.0400
  • 1,000 $7.8000
$7.8000 / $14.5500 Buy Now
DISTI # 448-IMBG65R022M1HXTMA1CT-ND
DigiKey SILICON CARBIDE MOSFET PG-TO263- Min Qty: 1 Lead time: 23 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1550
In Stock
  • 1 $15.0000
  • 10 $10.5640
  • 100 $9.5547
  • 1,000 $7.8061
$7.8061 / $15.0000 Buy Now
DISTI # IMBG65R022M1HXTMA1
Avnet Americas Silicon Carbide MOSFET, Single, N Channel, 64 A, 650 V, 0.022 ohm, TO-263 - Tape and Reel (Alt: IMBG65R022M1HXTMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 23 Weeks, 0 Days Container: Reel 0
  • 1,000 $7.4933
  • 2,000 $7.4158
  • 4,000 $7.3778
  • 6,000 $7.3398
  • 8,000 $7.3018
$7.3018 / $7.4933 Buy Now
DISTI # 726-IMBG65R022M1HXTM
Mouser Electronics SiC MOSFETs SILICON CARBIDE MOSFET RoHS: Compliant 903
  • 1 $14.5500
  • 10 $10.2500
  • 100 $8.1200
  • 500 $8.0400
  • 1,000 $7.8000
$7.8000 / $14.5500 Buy Now
DISTI # V72:2272_26252743
Arrow Electronics Trans MOSFET N-CH SiC 650V 64A 8-Pin(7+Tab) TO-263 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 23 Weeks Container: Cut Strips Americas - 288
  • 1 $10.8480
  • 10 $8.9000
  • 25 $8.7370
  • 100 $8.3720
  • 250 $8.0080
$8.0080 / $10.8480 Buy Now
Future Electronics IMBG65 Series N-Channel 650 V 64A 300W SMD Silicon Carbide MOSFET TO-263-8 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 23 Weeks Container: Reel 1000
Reel
  • 1,000 $8.5600
$8.5600 Buy Now
Future Electronics IMBG65 Series N-Channel 650 V 64A 300W SMD Silicon Carbide MOSFET TO-263-8 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 23 Weeks Container: Reel 0
Reel
  • 1,000 $8.5600
$8.5600 Buy Now
DISTI # 88985061
Verical Trans MOSFET N-CH SiC 650V 64A 8-Pin(7+Tab) TO-263 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Americas - 288
  • 1 $10.8480
$10.8480 Buy Now
DISTI # 75724579
Verical Trans MOSFET N-CH SiC 650V 64A 8-Pin(7+Tab) TO-263 T/R RoHS: Compliant Min Qty: 2 Package Multiple: 1 Date Code: 2237 Americas - 3
  • 2 $25.0922
$25.0922 Buy Now
Future Electronics IMBG65 Series N-Channel 650 V 64A 300W SMD Silicon Carbide MOSFET TO-263-8 Min Qty: 1000 Package Multiple: 1000 1000
null
  • 1,000 $8.5100
$8.5100 Buy Now
DISTI # SP005539143
EBV Elektronik Silicon Carbide MOSFET Single N Channel 64 A 650 V 0022 ohm TO263 (Alt: SP005539143) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 24 Weeks, 0 Days EBV - 1000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 1000 1000
  • 1,000 $13.9500
$13.9500 Buy Now

Part Details for IMBG65R022M1HXTMA1

IMBG65R022M1HXTMA1 CAD Models

IMBG65R022M1HXTMA1 Part Data Attributes

IMBG65R022M1HXTMA1 Infineon Technologies AG
Buy Now Datasheet
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IMBG65R022M1HXTMA1 Infineon Technologies AG
Samacsys Manufacturer Infineon

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