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Part Details for IMBG120R090M1HXTMA1 by Infineon Technologies AG
Results Overview of IMBG120R090M1HXTMA1 by Infineon Technologies AG
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IMBG120R090M1HXTMA1 Information
IMBG120R090M1HXTMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IMBG120R090M1HXTMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
92AH5310
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Newark | Mosfet, Sic, N-Ch, 1.2Kv, 26A, To-263, Mosfet Module Configuration:Single, Channel Type:N Channel, Continuous Drain Current Id:26A, Drain Source Voltage Vds:1.2Kv, No. Of Pins:7Pins, Rds(On) Test Voltage:18V, Power Dissipation:136W Rohs Compliant: Yes |Infineon IMBG120R090M1HXTMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2968 |
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$3.7100 / $5.5600 | Buy Now |
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DISTI #
448-IMBG120R090M1HXTMA1CT-ND
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DigiKey | SICFET N-CH 1.2KV 26A TO263 Min Qty: 1 Lead time: 97 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2553 In Stock |
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$3.7152 / $8.5000 | Buy Now |
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DISTI #
IMBG120R090M1HXTMA1
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Avnet Americas | Transistor Silicon Carbide MOSFET N-CH 1200V 26A 7-Pin TO-263 T/R - Tape and Reel (Alt: IMBG120R090M1HXTMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 53 Weeks, 1 Days Container: Reel | 3000 |
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$3.2362 / $3.4096 | Buy Now |
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DISTI #
92AH5310
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Avnet Americas | Transistor Silicon Carbide MOSFET N-CH 1200V 26A 7-Pin TO-263 T/R - Product that comes on tape, but is not reeled (Alt: 92AH5310) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Ammo Pack | 19 Partner Stock |
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$4.7100 / $7.6000 | Buy Now |
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DISTI #
726-IMBG120R090M1HXT
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Mouser Electronics | SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package RoHS: Compliant | 1376 |
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$3.6900 / $7.1800 | Buy Now |
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DISTI #
V99:2348_24472818
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Arrow Electronics | Trans MOSFET N-CH SiC 1.2KV 26A 8-Pin(7+Tab) TO-263 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 97 Weeks Date Code: 2125 | Americas - 595 |
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$3.6990 | Buy Now |
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DISTI #
79357570
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Verical | Trans MOSFET N-CH SiC 1.2KV 26A 8-Pin(7+Tab) TO-263 T/R RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Date Code: 2339 | Americas - 13000 |
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$4.6918 | Buy Now |
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DISTI #
77265820
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Verical | Trans MOSFET N-CH SiC 1.2KV 26A 8-Pin(7+Tab) TO-263 T/R RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 2348 | Americas - 1000 |
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$5.9800 / $7.0700 | Buy Now |
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DISTI #
85990181
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Verical | Trans MOSFET N-CH SiC 1.2KV 26A 8-Pin(7+Tab) TO-263 T/R RoHS: Compliant Min Qty: 79 Package Multiple: 1 Date Code: 2101 | Americas - 796 |
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$4.3000 / $4.7750 | Buy Now |
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DISTI #
63477669
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Verical | Trans MOSFET N-CH SiC 1.2KV 26A 8-Pin(7+Tab) TO-263 T/R RoHS: Compliant Min Qty: 2 Package Multiple: 1 Date Code: 2125 | Americas - 595 |
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$3.6990 | Buy Now |
Part Details for IMBG120R090M1HXTMA1
IMBG120R090M1HXTMA1 CAD Models
IMBG120R090M1HXTMA1 Part Data Attributes
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IMBG120R090M1HXTMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IMBG120R090M1HXTMA1
Infineon Technologies AG
Power Field-Effect Transistor, 26A I(D), 1200V, 0.16ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 26 A | |
| Drain-source On Resistance-Max | 0.16 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 4.3 pF | |
| JEDEC-95 Code | TO-263 | |
| JESD-30 Code | R-PSSO-G7 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 7 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 136 W | |
| Pulsed Drain Current-Max (IDM) | 65 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON CARBIDE |
Alternate Parts for IMBG120R090M1HXTMA1
This table gives cross-reference parts and alternative options found for IMBG120R090M1HXTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IMBG120R090M1HXTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IMBG120R090M1H | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, | IMBG120R090M1HXTMA1 vs IMBG120R090M1H |
IMBG120R090M1HXTMA1 Frequently Asked Questions (FAQ)
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The thermal resistance (Rth) of the IMBG120R090M1HXTMA1 is typically around 0.5 K/W, but this value can vary depending on the specific application and cooling conditions.
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To ensure reliability, it's essential to follow the recommended operating conditions, including temperature, voltage, and current ratings. Additionally, proper thermal management, such as heat sinking and cooling, is crucial to prevent overheating.
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For optimal performance, it's recommended to follow Infineon's guidelines for PCB layout and design, including using a solid ground plane, minimizing track lengths, and ensuring adequate decoupling and filtering.
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To troubleshoot issues, start by verifying the operating conditions, including voltage, current, and temperature. Check for proper thermal management, and ensure that the device is properly soldered and connected. If issues persist, consult Infineon's application notes and technical support resources.
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Yes, the IMBG120R090M1HXTMA1 is a high-frequency device, and proper EMI and EMC design considerations are crucial. Follow Infineon's guidelines for EMI and EMC design, including using shielding, filtering, and proper layout techniques.