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Part Details for IKW50N65H5FKSA1 by Infineon Technologies AG
Results Overview of IKW50N65H5FKSA1 by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
IKW50N65H5FKSA1 Information
IKW50N65H5FKSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IKW50N65H5FKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
33X0416
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Newark | Igbt, Single, 650V, 50A, To-247, Continuous Collector Current:50A, Collector Emitter Saturation Voltage:1.65V, Power Dissipation:305W, Collector Emitter Voltage Max:650V, No. Of Pins:3Pins, Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IKW50N65H5FKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 194 |
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$3.2800 / $5.9600 | Buy Now |
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DISTI #
448-IKW50N65H5FKSA1-ND
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DigiKey | IGBT 650V 80A TO247-3 Min Qty: 1 Lead time: 97 Weeks Container: Tube | Temporarily Out of Stock |
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$2.0154 / $5.3700 | Buy Now |
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DISTI #
IKW50N65H5FKSA1
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Avnet Americas | - Rail/Tube (Alt: IKW50N65H5FKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 22 Weeks, 0 Days Container: Tube | 0 |
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$2.2411 | Buy Now |
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DISTI #
726-IKW50N65H5FKSA1
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Mouser Electronics | IGBTs IGBT PRODUCTS RoHS: Compliant | 0 |
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$2.0100 / $4.5300 | Order Now |
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DISTI #
V36:1790_06378390
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Arrow Electronics | Trans IGBT Chip N-CH 650V 80A 305W 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 97 Weeks Date Code: 2428 | Americas - 1480 |
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$2.0550 / $2.4300 | Buy Now |
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DISTI #
83141565
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Verical | Trans IGBT Chip N-CH 650V 80A 305W 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 240 Package Multiple: 240 Date Code: 2428 | Americas - 1440 |
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$2.0550 / $2.4300 | Buy Now |
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Rochester Electronics | IKW50N65H5 - INDUSTRY 14 ' RoHS: Compliant Status: Active Min Qty: 1 | 212 |
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$1.7000 / $2.1200 | Buy Now |
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DISTI #
IKW50N65H5FKSA1
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TME | Transistor: IGBT, 650V, 50A, 305W, TO247-3, H5 Min Qty: 1 | 0 |
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$2.7200 / $5.0100 | RFQ |
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DISTI #
SP001001734
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EBV Elektronik | (Alt: SP001001734) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 53 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Vyrian | Transistors | 41 |
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RFQ |
Part Details for IKW50N65H5FKSA1
IKW50N65H5FKSA1 CAD Models
IKW50N65H5FKSA1 Part Data Attributes
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IKW50N65H5FKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IKW50N65H5FKSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 19 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Collector Current-Max (IC) | 80 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 4.8 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 305 W | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 231 ns | |
| Turn-on Time-Nom (ton) | 35 ns | |
| VCEsat-Max | 2.1 V |
IKW50N65H5FKSA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature of the IKW50N65H5FKSA1 is 175°C, as specified in the datasheet.
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To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
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The recommended gate resistor value depends on the specific application, but a typical value is between 10Ω to 100Ω. A lower value can help reduce switching losses, while a higher value can help reduce electromagnetic interference (EMI).
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To protect the MOSFET from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage, and consider adding a current sense resistor and a fuse to detect and respond to overcurrent conditions.
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The maximum allowable power dissipation of the IKW50N65H5FKSA1 depends on the operating conditions, but the datasheet specifies a maximum power dissipation of 150W at a case temperature of 25°C.