Datasheets
IKFW90N60EH3XKSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor,

Part Details for IKFW90N60EH3XKSA1 by Infineon Technologies AG

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IKFW90N60EH3XKSA1 Information

IKFW90N60EH3XKSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IKFW90N60EH3XKSA1

Part # Distributor Description Stock Price Buy
DISTI # 38AJ3749
Newark Trans, Igbt, 600V, 77A, 178W, To-247Ai Rohs Compliant: Yes |Infineon IKFW90N60EH3XKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 279
  • 1 $10.6800
  • 10 $10.2400
  • 25 $9.8700
  • 50 $9.5800
  • 100 $9.5200
  • 480 $9.4900
  • 720 $9.4600
$9.4600 / $10.6800 Buy Now
DISTI # 448-IKFW90N60EH3XKSA1-ND
DigiKey IGBT TRENCH FS 600V 77A TO-247-3 Min Qty: 1 Lead time: 19 Weeks Container: Tube Temporarily Out of Stock
  • 1 $11.8800
  • 30 $7.1297
  • 120 $6.0892
  • 510 $5.7627
$5.7627 / $11.8800 Buy Now
DISTI # IKFW90N60EH3XKSA1
Avnet Americas Trans IGBT Chip N-CH 95A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKFW90N60EH3XKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 19 Weeks, 0 Days Container: Tube 0
  • 240 $6.4082
$6.4082 Buy Now
DISTI # 726-IKFW90N60EH3XKSA
Mouser Electronics IGBTs INDUSTRY 14 RoHS: Compliant 0
  • 1 $11.4400
  • 10 $10.5600
  • 25 $7.1300
  • 100 $6.0900
  • 240 $6.0800
  • 480 $5.7600
$5.7600 / $11.4400 Order Now
DISTI # 81755625
Verical Trans IGBT Chip N-CH 600V 77A 178W 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 4 Package Multiple: 1 Americas - 240
  • 4 $11.5000
  • 10 $9.7900
  • 50 $6.9400
  • 100 $6.8000
$6.8000 / $11.5000 Buy Now
DISTI # IKFW90N60EH3XKSA1
TME Transistor: IGBT, 600V, 77A, 178W, TO247-3 Min Qty: 1 0
  • 1 $9.8200
  • 10 $8.0700
  • 90 $7.3100
  • 100 $7.2700
$7.2700 / $9.8200 RFQ
DISTI # IKFW90N60EH3XKSA1
Chip One Stop Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Tube 240
  • 1 $11.5000
  • 10 $9.7900
  • 50 $6.9400
  • 100 $6.8000
  • 960 $6.2700
$6.2700 / $11.5000 Buy Now
DISTI # SP001502666
EBV Elektronik Trans IGBT Chip NCH 95A 3Pin TO247 Tube (Alt: SP001502666) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 20 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IKFW90N60EH3XKSA1

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IKFW90N60EH3XKSA1 Part Data Attributes

IKFW90N60EH3XKSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IKFW90N60EH3XKSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 19 Weeks
Date Of Intro 2018-06-06
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 77 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 5.7 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 178 W
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 312 ns
Turn-on Time-Nom (ton) 76 ns
VCEsat-Max 2.3 V

IKFW90N60EH3XKSA1 Frequently Asked Questions (FAQ)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.

  • Infineon recommends using a gate driver with a minimum output current of 2A and a voltage rating of 15V to 20V. The driver should also have a high common-mode transient immunity (CMTI) to ensure reliable operation in noisy environments. Infineon's 1EDI60N12AF and 1EDI60N12AS are suitable gate driver options.

  • The IKFW90N60EH3XKSA1 has a maximum allowed overcurrent of 2.5 times the nominal current (150A) for a duration of 10ms. To protect the module from overcurrent, a fast-acting fuse or a current sensor with a shutdown circuit can be used. Additionally, the module's built-in desaturation detection can be used to trigger a shutdown in case of an overcurrent event.

  • The IKFW90N60EH3XKSA1 has a maximum junction temperature of 150°C. To ensure proper cooling, a heat sink with a thermal resistance of 0.5°C/W or lower should be used. The heat sink should be mounted using a thermal interface material (TIM) with a thermal conductivity of 5W/mK or higher. Additionally, a fan or other forced-air cooling method can be used to improve heat dissipation.

  • The IKFW90N60EH3XKSA1 should be stored in a dry, cool place with a temperature range of -40°C to 125°C. The module should be handled with care to avoid mechanical stress, and electrostatic discharge (ESD) precautions should be taken to prevent damage to the module's internal components.

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