Part Details for IFS100B12N3E4B31BOSA1 by Infineon Technologies AG
Results Overview of IFS100B12N3E4B31BOSA1 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IFS100B12N3E4B31BOSA1 Information
IFS100B12N3E4B31BOSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IFS100B12N3E4B31BOSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38AJ7550
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Newark | Igbt Module, 1.2Kv, 100A, Solder Rohs Compliant: Yes |Infineon IFS100B12N3E4B31BOSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$146.2400 / $163.6000 | Buy Now |
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DISTI #
IFS100B12N3E4B31BOSA1-ND
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DigiKey | IGBT MOD 1200V 200A 515W Min Qty: 1 Lead time: 12 Weeks Container: Tray |
2 In Stock |
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$94.9750 / $112.3400 | Buy Now |
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DISTI #
IFS100B12N3E4B31BOSA1
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Avnet Americas | IGBTs - Trays (Alt: IFS100B12N3E4B31BOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 12 Weeks, 0 Days Container: Tray | 0 |
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$105.6122 | Buy Now |
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DISTI #
75723977
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Verical | Trans IGBT Module N-CH 1200V 100A 515W 34-Pin ECONO3-4 Tray Min Qty: 1 Package Multiple: 1 Date Code: 2339 | Americas - 10 |
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$194.4646 | Buy Now |
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DISTI #
IFS100B12N3E4B31BOSA1
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Chip One Stop | Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Tray | 10 |
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$174.0000 | Buy Now |
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DISTI #
SP000643756
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EBV Elektronik | IGBTs (Alt: SP000643756) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IFS100B12N3E4B31BOSA1
IFS100B12N3E4B31BOSA1 CAD Models
IFS100B12N3E4B31BOSA1 Part Data Attributes
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IFS100B12N3E4B31BOSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IFS100B12N3E4B31BOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | MODULE-34 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR | |
| Gate-Emitter Thr Voltage-Max | 6.4 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X34 | |
| Number of Elements | 6 | |
| Number of Terminals | 34 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 515 W | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 610 ns | |
| Turn-on Time-Nom (ton) | 210 ns | |
| VCEsat-Max | 2.1 V |
IFS100B12N3E4B31BOSA1 Frequently Asked Questions (FAQ)
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The maximum junction temperature is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a temperature below 150°C to ensure reliable operation and to prevent thermal runaway.
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Proper cooling is crucial for the IFS100B12N3E4B31BOSA1. Ensure good thermal contact between the device and the heat sink, and use a thermal interface material (TIM) to fill any gaps. A heat sink with a thermal resistance of less than 1°C/W is recommended.
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The recommended gate resistor value is between 10 ohms and 100 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI), but may increase switching losses.
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Yes, the IFS100B12N3E4B31BOSA1 is suitable for high-reliability applications. It's built with a robust design and undergoes rigorous testing to ensure high reliability. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specified parameters.
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Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the IFS100B12N3E4B31BOSA1. Use a voltage clamp or a zener diode for OVP, and a current sense resistor or a dedicated OCP IC for OCP.