Part Details for HUFA75307T3ST by Rochester Electronics LLC
Results Overview of HUFA75307T3ST by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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HUFA75307T3ST Information
HUFA75307T3ST by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for HUFA75307T3ST
HUFA75307T3ST CAD Models
HUFA75307T3ST Part Data Attributes
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HUFA75307T3ST
Rochester Electronics LLC
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Datasheet
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HUFA75307T3ST
Rochester Electronics LLC
2.6A, 55V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Reach Compliance Code | unknown | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 2.6 A | |
| Drain-source On Resistance-Max | 0.09 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for HUFA75307T3ST
This table gives cross-reference parts and alternative options found for HUFA75307T3ST. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUFA75307T3ST, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| HUFA75307T3ST | onsemi | Check for Price | N-Channel UltraFET Power MOSFET 55V, 2.6A, 90mΩ, SOT-223-4 / TO-261-4, 4000-REEL, Automotive Qualified | HUFA75307T3ST vs HUFA75307T3ST |
| HUFA75307T3ST | Intersil Corporation | Check for Price | 2.6A, 55V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET | HUFA75307T3ST vs HUFA75307T3ST |
| HUFA75307T3ST | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 2.6A I(D), 55V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | HUFA75307T3ST vs HUFA75307T3ST |
| HUFA75307T3ST_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 2.6A I(D), 55V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-4 | HUFA75307T3ST vs HUFA75307T3ST_NL |