Part Details for FS75R07U1E4BPSA1 by Infineon Technologies AG
Results Overview of FS75R07U1E4BPSA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FS75R07U1E4BPSA1 Information
FS75R07U1E4BPSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FS75R07U1E4BPSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
FS75R07U1E4BPSA1
|
Avnet Americas | Transistor IGBT Module N-Channel 650V 100A 32-Pin AG-SMART1 - Trays (Alt: FS75R07U1E4BPSA1) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 26 Weeks, 0 Days Container: Tray | 0 |
|
RFQ |
Part Details for FS75R07U1E4BPSA1
FS75R07U1E4BPSA1 CAD Models
FS75R07U1E4BPSA1 Part Data Attributes
|
|
FS75R07U1E4BPSA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
FS75R07U1E4BPSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor
|
| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | MODULE-32 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 26 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 100 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | COMPLEX | |
| Gate-Emitter Thr Voltage-Max | 6.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X32 | |
| Number of Elements | 6 | |
| Number of Terminals | 32 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 275 W | |
| Reference Standard | UL APPROVED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 302 ns | |
| Turn-on Time-Nom (ton) | 43 ns | |
| VCEsat-Max | 1.95 V |
FS75R07U1E4BPSA1 Frequently Asked Questions (FAQ)
-
Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance.
-
To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable thermal interface material, and implement a robust cooling system. Additionally, consider using a thermistor or temperature sensor to monitor the device temperature.
-
Exceeding the maximum junction temperature (Tj) rating can lead to reduced lifespan, increased thermal resistance, and potentially even device failure. It's crucial to ensure that the device operates within the specified temperature range to maintain reliability and performance.
-
The FS75R07U1E4BPSA1 is an industrial-grade device, but it's not specifically designed for high-reliability or automotive applications. For such applications, consider using devices with higher reliability ratings, such as those with AEC-Q101 certification.
-
To prevent electrostatic discharge (ESD) damage, follow proper handling and assembly procedures, such as using ESD-safe materials, grounding straps, and ionizers. Ensure that all personnel handling the device are properly trained and equipped to prevent ESD events.