Part Details for FS50R06KE3BOSA1 by Infineon Technologies AG
Results Overview of FS50R06KE3BOSA1 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FS50R06KE3BOSA1 Information
FS50R06KE3BOSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FS50R06KE3BOSA1
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
2156-FS50R06KE3BOSA1-448-ND
|
DigiKey | FS50R06 - IGBT MODULE Min Qty: 6 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
664 In Stock |
|
$53.2000 | Buy Now |
DISTI #
FS50R06KE3BOSA1-ND
|
DigiKey | IGBT MODULE 600V 70A 190W Lead time: 18 Weeks Container: Tray | Limited Supply - Call |
|
Buy Now | |
DISTI #
FS50R06KE3BOSA1
|
Avnet Americas | - Trays (Alt: FS50R06KE3BOSA1) RoHS: Compliant Min Qty: 10 Package Multiple: 10 Lead time: 111 Weeks, 0 Days Container: Tray | 0 |
|
RFQ | |
DISTI #
86113765
|
Verical | Trans IGBT Module N-CH 600V 70A 190W 28-Pin ECONO2-6 Tray Min Qty: 25 Package Multiple: 1 Date Code: 1101 | Americas - 637 |
|
$51.1500 / $63.9375 | Buy Now |
|
Rochester Electronics | FS50R06 - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 | 664 |
|
$40.9200 / $51.1500 | Buy Now |
DISTI #
SP000091920
|
EBV Elektronik | Trans IGBT Module NCH 600V 70A 28pin ECONO26 (Alt: SP000091920) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for FS50R06KE3BOSA1
FS50R06KE3BOSA1 CAD Models
FS50R06KE3BOSA1 Part Data Attributes
|
FS50R06KE3BOSA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
FS50R06KE3BOSA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, ECONOPACK-28
|
Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | ECONOPACK-28 | |
Pin Count | 28 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 111 Weeks | |
Samacsys Manufacturer | Infineon | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 70 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
JESD-30 Code | R-XUFM-X28 | |
Number of Elements | 6 | |
Number of Terminals | 28 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 265 ns | |
Turn-on Time-Nom (ton) | 43 ns |
FS50R06KE3BOSA1 Frequently Asked Questions (FAQ)
-
The maximum junction temperature (Tj) for the FS50R06KE3BOSA1 is 175°C. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
-
Proper cooling is crucial for the FS50R06KE3BOSA1. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a thermal resistance of less than 1.5 K/W. Also, consider using a thermal interface material (TIM) to fill any gaps between the device and heat sink.
-
The recommended gate resistance (Rg) for the FS50R06KE3BOSA1 is between 1 ohm and 10 ohm. A lower gate resistance can help reduce switching losses, but may also increase the risk of oscillations.
-
Yes, the FS50R06KE3BOSA1 can be used in a parallel configuration to increase the overall current handling capability. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
-
The recommended dead time for the FS50R06KE3BOSA1 is between 100 ns and 500 ns. A shorter dead time can help reduce switching losses, but may also increase the risk of shoot-through currents.