Part Details for FS50R06KE3 by Infineon Technologies AG
Results Overview of FS50R06KE3 by Infineon Technologies AG
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- Part Data Attributes: (Available)
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FS50R06KE3 Information
FS50R06KE3 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for FS50R06KE3
FS50R06KE3 CAD Models
FS50R06KE3 Part Data Attributes
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FS50R06KE3
Infineon Technologies AG
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Datasheet
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FS50R06KE3
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, ECONOPACK-28
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | ECONOPACK-28 | |
| Pin Count | 28 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 70 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X28 | |
| Number of Elements | 6 | |
| Number of Terminals | 28 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 190 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 265 ns | |
| Turn-on Time-Nom (ton) | 43 ns | |
| VCEsat-Max | 1.9 V |
FS50R06KE3 Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) of the FS50R06KE3 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
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To calculate the power dissipation of the FS50R06KE3, you need to consider the voltage drop across the device (Vds), the drain current (Id), and the thermal resistance (Rthja). The power dissipation (Pd) can be calculated using the formula: Pd = Vds x Id x Rthja. Refer to the datasheet for the specific values of these parameters.
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The recommended gate resistor value for the FS50R06KE3 depends on the specific application and the required switching frequency. A general guideline is to use a gate resistor value between 10 ohms and 100 ohms. However, it's recommended to consult the application note or the datasheet for more specific guidance.
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Yes, the FS50R06KE3 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the device is properly driven to minimize switching losses.
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To protect the FS50R06KE3 from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, consider using a current sense resistor and a fuse to detect and respond to overcurrent conditions.