Datasheets
FS500R17OE4DPBOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-29

Part Details for FS500R17OE4DPBOSA1 by Infineon Technologies AG

Results Overview of FS500R17OE4DPBOSA1 by Infineon Technologies AG

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FS500R17OE4DPBOSA1 Information

FS500R17OE4DPBOSA1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FS500R17OE4DPBOSA1

Part # Distributor Description Stock Price Buy
DISTI # 2156-FS500R17OE4DPBOSA1-448-ND
DigiKey IGBT MOD 1700V 1000A 20MW Min Qty: 1 Lead time: 14 Weeks Container: Bulk MARKETPLACE PRODUCT 612
In Stock
  • 1 $648.3000
$648.3000 Buy Now
DISTI # FS500R17OE4DPBOSA1-ND
DigiKey IGBT MOD 1700V 1000A 20MW Min Qty: 1 Lead time: 14 Weeks Container: Tray Temporarily Out of Stock
  • 4 $653.0500
$653.0500 Buy Now
DISTI # FS500R17OE4DPBOSA1
Avnet Americas IGBTs - Trays (Alt: FS500R17OE4DPBOSA1) RoHS: Compliant Min Qty: 4 Package Multiple: 4 Lead time: 14 Weeks, 0 Days Container: Tray 0
  • 4 $726.1916
$726.1916 Buy Now
DISTI # 85982755
Verical Econo PACK™ module with Trench/Field stop IGBT4 and Emitter Controlled 3 diode and PressFIT/ pre-applied Thermal Interface Material Min Qty: 1 Package Multiple: 1 Date Code: 2201 Americas - 4
  • 1 $779.2125
$779.2125 Buy Now
Rochester Electronics FS450R17 - IGBT Module RoHS: Compliant Status: Active Min Qty: 1 612
  • 1 $623.3700
  • 25 $604.6700
  • 100 $585.9700
  • 500 $567.2700
  • 1,000 $548.5700
$548.5700 / $623.3700 Buy Now
DISTI # SP001004830
EBV Elektronik IGBTs (Alt: SP001004830) RoHS: Compliant Min Qty: 4 Package Multiple: 4 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FS500R17OE4DPBOSA1

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FS500R17OE4DPBOSA1 Part Data Attributes

FS500R17OE4DPBOSA1 Infineon Technologies AG
Buy Now Datasheet
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FS500R17OE4DPBOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-29
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description MODULE-29
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector-Emitter Voltage-Max 1700 V
Configuration 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-XUFM-X29
Number of Elements 6
Number of Terminals 29
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1080 ns
Turn-on Time-Nom (ton) 330 ns

FS500R17OE4DPBOSA1 Frequently Asked Questions (FAQ)

  • Infineon provides a dedicated application note (AN2014-03) that outlines the recommended PCB layout and thermal design guidelines for the FS500R17OE4DPBOSA1. It's essential to follow these guidelines to ensure optimal performance, reliability, and thermal management.

  • The selection of a suitable gate driver depends on the specific application requirements. Infineon recommends using a gate driver with a minimum output current of 2A and a voltage rating that matches the IGBT's gate-emitter voltage. The driver should also provide galvanic isolation and have a suitable propagation delay. Infineon's 1EDI60N12AF and 1EDI60N12AS are suitable gate driver options.

  • The FS500R17OE4DPBOSA1 has a maximum allowed overcurrent of 2.5 times the nominal current (Ic) for a duration of 10ms. The maximum allowed overvoltage is 1.5 times the nominal voltage (Vce) for a duration of 10ms. Exceeding these limits can lead to device damage or failure.

  • To ensure EMC, follow Infineon's guidelines for PCB layout, component placement, and shielding. Use a common mode choke and a suitable filter to reduce electromagnetic interference (EMI). Additionally, ensure that the IGBT module is properly decoupled from the power supply and other components.

  • For high-power applications, a forced air cooling system or a liquid cooling system is recommended. The cooling system should be designed to maintain a junction temperature (Tj) below 125°C. Infineon provides thermal simulation models and application notes to help with thermal design and optimization.

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