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Part Details for FQT1N80TF-WS by onsemi
Results Overview of FQT1N80TF-WS by onsemi
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
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FQT1N80TF-WS Information
FQT1N80TF-WS by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQT1N80TF-WS
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31Y1560
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Newark | Mosfet, N-Ch, 800V, 0.2A, Sot-223-3, Channel Type:N Channel, Drain Source Voltage Vds:800V, Continuous Drain Current Id:200Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Onsemi FQT1N80TF-WS RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 7262 |
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$0.3680 / $0.9800 | Buy Now |
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DISTI #
FQT1N80TF-WSCT-ND
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DigiKey | MOSFET N-CH 800V 200MA SOT223-3 Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
7011 In Stock |
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$0.3685 / $1.2400 | Buy Now |
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DISTI #
FQT1N80TF-WS
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Avnet Americas | Trans MOSFET N-CH 800V 0.2A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FQT1N80TF-WS) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 11 Weeks, 0 Days Container: Reel | 288000 Factory Stock |
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$0.3456 / $0.3538 | Buy Now |
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DISTI #
512-FQT1N80TF_WS
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Mouser Electronics | MOSFETs 800V 0.2A 20Ohm N-Channel RoHS: Compliant | 89189 |
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$0.3760 / $1.2200 | Buy Now |
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Onlinecomponents.com | Power Mosfet, N-channel, Qfet®, 800 V, 0.2 A, 20 Ω, SOT-223 RoHS: Compliant | 0 |
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$0.3457 / $0.3920 | Buy Now |
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DISTI #
88175728
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Verical | Trans MOSFET N-CH 800V 0.2A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 4000 Package Multiple: 4000 | Americas - 768000 |
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$0.3649 | Buy Now |
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DISTI #
85984374
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Verical | Trans MOSFET N-CH 800V 0.2A 4-Pin(3+Tab) SOT-223 T/R Min Qty: 611 Package Multiple: 1 Date Code: 2301 | Americas - 8000 |
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$0.6141 | Buy Now |
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Rochester Electronics | FQT1N80 - Power MOSFET, N-Channel, QFET, 800 V, 0.2 A RoHS: Not Compliant Status: Active Min Qty: 1 | 8000 |
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$0.3046 / $0.4913 | Buy Now |
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DISTI #
FQT1N80TF-WS
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IBS Electronics | POWER MOSFET N-CHANNEL QFET®, 800 V 0.2 A 20 Ω, SOT-223 Min Qty: 4000 Package Multiple: 1 | 0 |
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$0.4420 / $0.4550 | Buy Now |
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DISTI #
FQT1N80TF-WS
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 4000 | 0 |
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$0.3600 | Buy Now |
Part Details for FQT1N80TF-WS
FQT1N80TF-WS CAD Models
FQT1N80TF-WS Part Data Attributes
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FQT1N80TF-WS
onsemi
Buy Now
Datasheet
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Compare Parts:
FQT1N80TF-WS
onsemi
Power MOSFET, N-Channel, QFET®, 800 V, 0.2 A, 20 Ω, SOT-223, SOT-223 4L, 4000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOT-223 4L | |
| Package Description | SOT-223, 4 PIN | |
| Manufacturer Package Code | 318H-01 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 11 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 90 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 0.2 A | |
| Drain-source On Resistance-Max | 20 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5 pF | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.1 W | |
| Pulsed Drain Current-Max (IDM) | 0.8 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 100 ns | |
| Turn-on Time-Max (ton) | 90 ns |
FQT1N80TF-WS Frequently Asked Questions (FAQ)
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The recommended PCB footprint for FQT1N80TF-WS is a standard SOT-223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
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To ensure reliable operation of FQT1N80TF-WS in high-temperature environments, it is recommended to follow proper thermal management practices, such as using a heat sink, ensuring good airflow, and avoiding thermal hotspots.
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The maximum allowed voltage transient for FQT1N80TF-WS is 100V for a duration of 100ms, as specified in the datasheet. However, it is recommended to limit voltage transients to 80V or less to ensure reliable operation.
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Yes, FQT1N80TF-WS can be used in a switching regulator application, but it is recommended to ensure that the device is operated within its safe operating area (SOA) and that proper snubbing and filtering are used to minimize voltage and current transients.
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The optimal gate resistor value for FQT1N80TF-WS depends on the specific application and switching frequency. A general guideline is to use a gate resistor value between 10Ω and 100Ω, and to adjust the value based on the device's switching characteristics and the desired switching frequency.