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Part Details for FQT1N60CTF-WS by onsemi
Results Overview of FQT1N60CTF-WS by onsemi
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FQT1N60CTF-WS Information
FQT1N60CTF-WS by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQT1N60CTF-WS
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31Y1559
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Newark | Mosfet Transistor, N Channel, 200 Ma, 600 V, 9.3 Ohm, 10 V, 4 V Rohs Compliant: Yes |Onsemi FQT1N60CTF-WS RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 5225 |
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$0.3580 / $0.8600 | Buy Now |
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DISTI #
48AC1190
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Newark | Qfc 600V 11.5Ohm Sot223/ Reel Rohs Compliant: Yes |Onsemi FQT1N60CTF-WS RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2490 / $0.3240 | Buy Now |
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DISTI #
38AH0347
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Newark | Qfc 600V 11.5Ohm Sot223 Rohs Compliant: Yes |Onsemi FQT1N60CTF-WS RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2490 / $0.3240 | Buy Now |
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DISTI #
FQT1N60CTF-WSCT-ND
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DigiKey | MOSFET N-CH 600V 200MA SOT223-4 Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
13192 In Stock |
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$0.2558 / $0.9000 | Buy Now |
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DISTI #
FQT1N60CTF-WS
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Avnet Americas | Trans MOSFET N-CH 600V 0.2A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FQT1N60CTF-WS) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 111 Weeks, 0 Days Container: Reel | 40000 |
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RFQ | |
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DISTI #
512-FQT1N60CTF_WS
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Mouser Electronics | MOSFETs 600V 0.2A 11.5Ohm N-Channel RoHS: Compliant | 8691 |
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$0.2610 / $0.8800 | Buy Now |
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Onlinecomponents.com | Power Mosfet, N-channel, Qfet®, 600 V, 0.2 A, 11.5 Ω, SOT-223 RoHS: Compliant | 0 |
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$0.2312 / $0.2468 | Buy Now |
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DISTI #
FQT1N60CTF-WS
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TME | Transistor: N-MOSFET, unipolar, 600V, 0.12A, 2.1W, SOT223 Min Qty: 1 | 0 |
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$0.2680 / $0.7510 | RFQ |
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DISTI #
FQT1N60CTF-WS
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 4000 | 0 |
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$0.2400 | Buy Now |
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DISTI #
FQT1N60CTF-WS
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Avnet Asia | Trans MOSFET N-CH 600V 0.2A 4-Pin(3+Tab) SOT-223 T/R (Alt: FQT1N60CTF-WS) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 8 Weeks, 0 Days | 0 |
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RFQ |
Part Details for FQT1N60CTF-WS
FQT1N60CTF-WS CAD Models
FQT1N60CTF-WS Part Data Attributes
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FQT1N60CTF-WS
onsemi
Buy Now
Datasheet
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Compare Parts:
FQT1N60CTF-WS
onsemi
Power MOSFET, N-Channel, QFET®, 600 V, 0.2 A, 11.5 Ω, SOT-223, SOT-223 4L, 4000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOT-223 4L | |
| Package Description | ROHS COMPLIANT PACKAGE-4 | |
| Manufacturer Package Code | 318H-01 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 0.2 A | |
| Drain-source On Resistance-Max | 11.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6 pF | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 250 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.1 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FQT1N60CTF-WS Frequently Asked Questions (FAQ)
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The recommended PCB footprint for FQT1N60CTF-WS is a standard SOT-223 package footprint with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
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To ensure reliability in high-temperature applications, ensure that the device is operated within the recommended junction temperature range (TJ) of -55°C to 150°C, and follow proper thermal management and cooling techniques.
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The maximum allowed voltage transient for FQT1N60CTF-WS is 80V, as specified in the datasheet. Exceeding this voltage may damage the device.
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While FQT1N60CTF-WS can be used in switching applications, it is not recommended for high-frequency switching (>100kHz) due to its relatively high gate charge and switching losses. A more suitable device for high-frequency switching would be a MOSFET with lower gate charge and switching losses.
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To protect FQT1N60CTF-WS from ESD, follow proper handling and storage procedures, use ESD-protective packaging and materials, and ensure that the device is properly grounded during assembly and testing.