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Part Details for FQPF70N10 by onsemi
Results Overview of FQPF70N10 by onsemi
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FQPF70N10 Information
FQPF70N10 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQPF70N10
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
V79:2366_30170748
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Arrow Electronics | Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220FP Tube Min Qty: 1 Package Multiple: 1 Date Code: 2334 | Americas - 707 |
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$2.0080 / $3.3661 | Buy Now |
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DISTI #
87541786
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Verical | Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220FP Tube Min Qty: 3 Package Multiple: 1 Date Code: 2334 | Americas - 707 |
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$2.0080 / $3.3177 | Buy Now |
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DISTI #
FQPF70N10
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Avnet Silica | Trans MOSFET NCH 100V 35A 3Pin3Tab TO220F Rail (Alt: FQPF70N10) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
FQPF70N10
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EBV Elektronik | Trans MOSFET NCH 100V 35A 3Pin3Tab TO220F Rail (Alt: FQPF70N10) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock | 1000 |
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RFQ | |
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LCSC | 100V 35A 23m10V17.5A 62W 4V 1 N-channel TO-220F-3 MOSFETs ROHS | 4 |
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$5.5882 / $7.6084 | Buy Now |
Part Details for FQPF70N10
FQPF70N10 CAD Models
FQPF70N10 Part Data Attributes
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FQPF70N10
onsemi
Buy Now
Datasheet
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Compare Parts:
FQPF70N10
onsemi
Power MOSFET, N-Channel, QFET®, 100 V, 35 A, 23 mΩ, TO-220F, TO-220-3 FullPak, 1000-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220-3 FullPak | |
| Manufacturer Package Code | 221AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 50 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 1300 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.023 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 62 W | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQPF70N10
This table gives cross-reference parts and alternative options found for FQPF70N10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQPF70N10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FQPF70N10_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 35A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | FQPF70N10 vs FQPF70N10_NL |
| IRFI3710 | International Rectifier | Check for Price | Power Field-Effect Transistor, 32A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULLPAK-3 | FQPF70N10 vs IRFI3710 |
FQPF70N10 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the FQPF70N10 is not explicitly stated in the datasheet. However, it is recommended to follow the guidelines provided in the application note AND8039/D for ensuring safe operating conditions.
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To ensure proper thermal management, it is recommended to follow the thermal design guidelines provided in the application note AND8039/D. This includes using a heat sink with a thermal resistance of less than 1°C/W and ensuring good thermal contact between the device and the heat sink.
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The recommended gate drive circuit for the FQPF70N10 is a non-inverting gate drive with a gate resistance of 10-20 ohms and a gate-source voltage of 10-15V. A suitable gate drive IC is the FAN5350 or equivalent.
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To protect the FQPF70N10 from overvoltage and overcurrent, it is recommended to use a voltage clamp circuit and a current sense resistor in series with the device. Additionally, a fuse or a circuit breaker can be used to protect against overcurrent conditions.
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The recommended PCB layout for the FQPF70N10 includes using a multi-layer board with a solid ground plane, keeping the high-current paths short and wide, and using a Kelvin connection for the source pin. A detailed layout guide is provided in the application note AND8039/D.