Part Details for FQPF45N15V2 by onsemi
Results Overview of FQPF45N15V2 by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
FQPF45N15V2 Information
FQPF45N15V2 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQPF45N15V2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
FQPF45N15V2
|
TME | Transistor: N-MOSFET, unipolar, 150V, 31A, Idm: 180A, 66W, TO220FP Min Qty: 1 | 0 |
|
$1.3300 / $2.0200 | RFQ |
|
DISTI #
FQPF45N15V2
|
Avnet Silica | Trans MOSFET NCH 150V 45A 3Pin3Tab TO220F Rail (Alt: FQPF45N15V2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
|
DISTI #
FQPF45N15V2
|
EBV Elektronik | Trans MOSFET NCH 150V 45A 3Pin3Tab TO220F Rail (Alt: FQPF45N15V2) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for FQPF45N15V2
FQPF45N15V2 CAD Models
FQPF45N15V2 Part Data Attributes
|
|
FQPF45N15V2
onsemi
Buy Now
Datasheet
|
Compare Parts:
FQPF45N15V2
onsemi
Power MOSFET, N-Channel, QFET®, 150 V, 45 A, 40 mΩ, TO-220F, TO-220-3 FullPak, 1000-TUBE
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220-3 FullPak | |
| Package Description | TO-220F, 3 PIN | |
| Manufacturer Package Code | 221AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 1124 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 45 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 66 W | |
| Pulsed Drain Current-Max (IDM) | 180 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQPF45N15V2
This table gives cross-reference parts and alternative options found for FQPF45N15V2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQPF45N15V2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FQPF45N15V2_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 45A I(D), 150V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | FQPF45N15V2 vs FQPF45N15V2_NL |
| FQI45N15V2 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 45A I(D), 150V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3 | FQPF45N15V2 vs FQI45N15V2 |
FQPF45N15V2 Frequently Asked Questions (FAQ)
-
The maximum junction temperature that the FQPF45N15V2 can withstand is 150°C. However, it's recommended to operate the device at a junction temperature below 125°C for reliable operation.
-
To ensure proper biasing, the FQPF45N15V2 requires a gate-source voltage (Vgs) between 2V and 5V, and a drain-source voltage (Vds) not exceeding 150V. Additionally, a gate resistor (Rg) between 1kΩ and 10kΩ is recommended to prevent oscillations.
-
To minimize parasitic inductance and capacitance, it's recommended to use a compact PCB layout with short, wide traces for the drain and source pins. The gate pin should be connected to a low-impedance source, and a ground plane should be used to reduce electromagnetic interference (EMI).
-
Yes, the FQPF45N15V2 can be used in high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the PCB layout is optimized for high-frequency operation.
-
To protect the FQPF45N15V2 from ESD, it's recommended to use ESD protection devices, such as TVS diodes or ESD suppressors, on the input and output pins. Additionally, handling the device with ESD-safe materials and following proper ESD handling procedures can prevent damage.