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Part Details for FQPF3N80C by onsemi
Results Overview of FQPF3N80C by onsemi
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FQPF3N80C Information
FQPF3N80C by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQPF3N80C
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
84H4758
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Newark | N Channel Mosfet, 800V, 3A, To-220F, Channel Type:N Channel, Drain Source Voltage Vds:800V, Continuous Drain Current Id:3A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Msl:- Rohs Compliant: Yes |Onsemi FQPF3N80C RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.8560 / $1.0800 | Buy Now |
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DISTI #
FQPF3N80C-ND
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DigiKey | MOSFET N-CH 800V 3A TO220F Min Qty: 1 Lead time: 10 Weeks Container: Tube |
1156 In Stock |
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Buy Now | |
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DISTI #
FQPF3N80C
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Avnet Americas | Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FQPF3N80C) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days Container: Tube | 0 |
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$0.7193 / $0.7456 | Buy Now |
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DISTI #
84H4758
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Avnet Americas | Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220F Rail - Bulk (Alt: 84H4758) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks, 3 Days Container: Bulk | 0 |
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$0.9730 | Buy Now |
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DISTI #
512-FQPF3N80C
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Mouser Electronics | MOSFETs 800V N-Ch Q-FET advance C-Series RoHS: Compliant | 1682 |
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$0.7640 / $1.3800 | Buy Now |
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DISTI #
E02:0323_00841144
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Arrow Electronics | Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220FP Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2444 | Europe - 4 |
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$0.7830 / $1.2011 | Buy Now |
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Onlinecomponents.com | Power Mosfet, N-channel, Qfet®, 800 V, 3.0 A, 4.8 Ω, TO-220F RoHS: Compliant | 0 |
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$0.7430 / $0.9130 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 3A, 800V, 4.8ohm, N-Channel, MOSFET, TO-220AB RoHS: Not Compliant Status: Active Min Qty: 1 | 500 |
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$0.6420 / $1.0400 | Buy Now |
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DISTI #
FQPF3N80C
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TME | Transistor: N-MOSFET, unipolar, 800V, 1.9A, 39W, TO220FP Min Qty: 1 | 0 |
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$0.7200 / $1.2800 | RFQ |
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DISTI #
FQPF3N80C
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1000 | 0 |
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$0.7600 | Buy Now |
Part Details for FQPF3N80C
FQPF3N80C CAD Models
FQPF3N80C Part Data Attributes
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FQPF3N80C
onsemi
Buy Now
Datasheet
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Compare Parts:
FQPF3N80C
onsemi
Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220F, TO-220-3 FullPak, 1000-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220-3 FullPak | |
| Package Description | TO-220F, 3 PIN | |
| Manufacturer Package Code | 221AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 9 Weeks, 3 Days | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 320 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 4.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 39 W | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQPF3N80C
This table gives cross-reference parts and alternative options found for FQPF3N80C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQPF3N80C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FQPF3N80CYDTU | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | FQPF3N80C vs FQPF3N80CYDTU |
| FQPF3N80CYDTU | Rochester Electronics LLC | Check for Price | 3A, 800V, 4.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | FQPF3N80C vs FQPF3N80CYDTU |
| FQPF3N80C | Fairchild Semiconductor Corporation | Check for Price | N-Channel QFET® MOSFET 800V, 3A, 4.8Ω, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD, 1000/RAIL | FQPF3N80C vs FQPF3N80C |
FQPF3N80C Frequently Asked Questions (FAQ)
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The maximum junction temperature of the FQPF3N80C is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
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To ensure proper biasing, make sure to provide a stable gate-source voltage (Vgs) between 2V and 5V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the gate current is limited to the recommended maximum value.
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For optimal thermal performance, use a PCB with a thick copper layer (at least 2 oz) and a thermal relief pattern under the device. Ensure good thermal conductivity between the device and the heat sink or PCB. A thermal interface material (TIM) can be used to improve heat transfer.
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Handle the device with ESD-protective equipment and follow proper ESD handling procedures. Use an ESD-protected workstation and wear an ESD strap or wrist strap. Avoid touching the device's pins or leads, and use a conductive foam or ESD bag for storage.
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Use a soldering iron with a temperature range of 250°C to 260°C, and a soldering time of 3-5 seconds. Ensure the soldering iron is ESD-protected and use a solder with a melting point above 217°C.