Datasheets
FQPF3N80C by:

N-Channel QFET® MOSFET 800V, 3A, 4.8Ω, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD, 1000/RAIL

Part Details for FQPF3N80C by Fairchild Semiconductor Corporation

Results Overview of FQPF3N80C by Fairchild Semiconductor Corporation

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FQPF3N80C Information

FQPF3N80C by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FQPF3N80C

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 4 8000
  • 4 $1.6500
  • 14 $1.2375
  • 42 $1.0312
  • 147 $0.6187
  • 486 $0.5775
  • 1,300 $0.5445
$0.5445 / $1.6500 Buy Now
Quest Components   6400
  • 1 $2.2000
  • 840 $0.6875
  • 1,456 $0.6050
$0.6050 / $2.2000 Buy Now
Quest Components   179
  • 1 $1.8510
  • 15 $1.1106
  • 55 $0.9255
$0.9255 / $1.8510 Buy Now
Rochester Electronics Power Field-Effect Transistor, 3A, 800V, 4.8ohm, N-Channel, MOSFET, TO-220AB RoHS: Not Compliant Status: Active Min Qty: 1 191597
  • 100 $1.0400
  • 500 $0.9320
  • 1,000 $0.8595
  • 10,000 $0.7663
  • 100,000 $0.6420
$0.6420 / $1.0400 Buy Now

Part Details for FQPF3N80C

FQPF3N80C CAD Models

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FQPF3N80C Part Data Attributes

FQPF3N80C Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FQPF3N80C Fairchild Semiconductor Corporation N-Channel QFET® MOSFET 800V, 3A, 4.8Ω, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD, 1000/RAIL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220F
Package Description LEAD FREE, TO-220F, 3 PIN
Pin Count 3
Manufacturer Package Code TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 320 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 4.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 39 W
Pulsed Drain Current-Max (IDM) 12 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQPF3N80C

This table gives cross-reference parts and alternative options found for FQPF3N80C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQPF3N80C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FQPF3N80CYDTU Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN FQPF3N80C vs FQPF3N80CYDTU
FQPF3N80CYDTU Rochester Electronics LLC Check for Price 3A, 800V, 4.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN FQPF3N80C vs FQPF3N80CYDTU

FQPF3N80C Related Parts

FQPF3N80C Frequently Asked Questions (FAQ)

  • The maximum junction temperature that the FQPF3N80C can withstand is 150°C.

  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal pad and thermal vias to dissipate heat efficiently.

  • The recommended gate drive voltage for the FQPF3N80C is between 10V and 15V. This ensures proper switching and minimizes power losses.

  • Yes, the FQPF3N80C is suitable for high-frequency switching applications up to 100 kHz. However, the user should ensure that the device is properly cooled and the gate drive voltage is optimized for the specific application.

  • To protect the FQPF3N80C from overvoltage and overcurrent, a voltage clamp or a transient voltage suppressor (TVS) can be used. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.

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