Part Details for FQPF3N80 by Rochester Electronics LLC
Results Overview of FQPF3N80 by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FQPF3N80 Information
FQPF3N80 by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for FQPF3N80
FQPF3N80 CAD Models
FQPF3N80 Part Data Attributes
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FQPF3N80
Rochester Electronics LLC
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Datasheet
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FQPF3N80
Rochester Electronics LLC
1.8A, 800V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | TO-220F | |
| Package Description | TO-220F, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| Avalanche Energy Rating (Eas) | 320 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 1.8 A | |
| Drain-source On Resistance-Max | 5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | NOT APPLICABLE | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 7.2 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQPF3N80
This table gives cross-reference parts and alternative options found for FQPF3N80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQPF3N80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FQPF10N60C | Rochester Electronics LLC | Check for Price | 9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | FQPF3N80 vs FQPF10N60C |
| FQA15N70 | Rochester Electronics LLC | Check for Price | 15A, 700V, 0.56ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN | FQPF3N80 vs FQA15N70 |
| FQP4N90 | Rochester Electronics LLC | Check for Price | 4.2A, 900V, 3.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | FQPF3N80 vs FQP4N90 |
| FQP6N50C | Rochester Electronics LLC | Check for Price | 5.5A, 500V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | FQPF3N80 vs FQP6N50C |
| FDB2572 | Rochester Electronics LLC | Check for Price | 4A, 150V, 0.054ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN | FQPF3N80 vs FDB2572 |
| SPP04N60S5 | Rochester Electronics LLC | Check for Price | 4.5A, 600V, 0.95ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN | FQPF3N80 vs SPP04N60S5 |
| ISL9N312AS3ST | Rochester Electronics LLC | Check for Price | 58A, 30V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | FQPF3N80 vs ISL9N312AS3ST |
| RFP12N18 | Rochester Electronics LLC | Check for Price | 12A, 180V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | FQPF3N80 vs RFP12N18 |
| IRF448 | International Rectifier | Check for Price | Power Field-Effect Transistor, 9.6A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | FQPF3N80 vs IRF448 |
| IRFIP054 | International Rectifier | Check for Price | Power Field-Effect Transistor, 64A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | FQPF3N80 vs IRFIP054 |