Part Details for FQPF20N06 by onsemi
Results Overview of FQPF20N06 by onsemi
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
FQPF20N06 Information
FQPF20N06 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQPF20N06
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
20C4447
|
Newark | Transistor, mosfet, n-Channel,60V V(Br)Dss,15A I(D),to-220Ab(Fp) Rohs Compliant: Yes |Onsemi FQPF20N06 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
|
|
Bristol Electronics | 237 |
|
RFQ | ||
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 15A I(D), 60V, 0.06OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 189 |
|
$0.9072 / $2.2680 | Buy Now |
|
|
Rochester Electronics | Power Field-Effect Transistor, 15A, 60V, 0.06ohm, N-Channel, MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 275 |
|
$0.4621 / $0.7453 | Buy Now |
|
DISTI #
FQPF20N06
|
Avnet Silica | Trans MOSFET NCH 60V 15A 3Pin3Tab TO220F Rail (Alt: FQPF20N06) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | Silica - 0 |
|
Buy Now | |
|
DISTI #
FQPF20N06
|
EBV Elektronik | Trans MOSFET NCH 60V 15A 3Pin3Tab TO220F Rail (Alt: FQPF20N06) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for FQPF20N06
FQPF20N06 CAD Models
FQPF20N06 Part Data Attributes
|
|
FQPF20N06
onsemi
Buy Now
Datasheet
|
Compare Parts:
FQPF20N06
onsemi
Power MOSFET, N-Channel, QFET®, 60 V, 15 A, 60 mΩ, TO-220F, TO-220-3 FullPak, 1000-TUBE
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220-3 FullPak | |
| Package Description | TO-220F, 3 PIN | |
| Manufacturer Package Code | 221AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 155 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 15 A | |
| Drain-source On Resistance-Max | 0.06 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 30 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQPF20N06
This table gives cross-reference parts and alternative options found for FQPF20N06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQPF20N06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FQPF20N06 | Fairchild Semiconductor Corporation | Check for Price | N-Channel QFET® MOSFET 60V, 15A, 60mΩ, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD, 1000/RAIL | FQPF20N06 vs FQPF20N06 |
| FQPF20N06L | onsemi | Check for Price | N-Channel QFET® MOSFET 60V, 15.7A, 52mΩ Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 15.7 A, 52 mΩ, TO-220F, TO-220-3 FullPak, 1000-TUBE | FQPF20N06 vs FQPF20N06L |
| FS4UM-12 | Renesas Electronics Corporation | Check for Price | 4A, 600V, 2.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | FQPF20N06 vs FS4UM-12 |
| FS4UM-12 | Powerex Power Semiconductors | Check for Price | Power Field-Effect Transistor, 4A I(D), 600V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | FQPF20N06 vs FS4UM-12 |
| FS4UM-12 | Mitsubishi Electric | Check for Price | Power Field-Effect Transistor, 4A I(D), 600V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | FQPF20N06 vs FS4UM-12 |
FQPF20N06 Frequently Asked Questions (FAQ)
-
The maximum junction temperature for the FQPF20N06 is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
-
To ensure proper biasing, make sure to provide a gate-source voltage (Vgs) between 4V to 10V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the gate current is limited to the recommended maximum value.
-
For optimal thermal performance, use a PCB with a thermal relief pattern under the device, and ensure good thermal conductivity between the device and the heat sink. Keep the PCB traces short and wide to minimize inductance and resistance.
-
Yes, the FQPF20N06 is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the gate drive circuitry is capable of providing a fast rise and fall time to minimize switching losses.
-
Handle the device with ESD-protective equipment and follow proper ESD handling procedures. Use an ESD-protected workstation and ensure that all personnel handling the device are grounded.