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Part Details for FQP7N80C by onsemi
Results Overview of FQP7N80C by onsemi
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Automotive
FQP7N80C Information
FQP7N80C by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQP7N80C
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
84H4783
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Newark | Transistor, mosfet, n-Channel,800V V(Br)Dss,6.6A I(D),to-220 Rohs Compliant: Yes |Onsemi FQP7N80C RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
FQP7N80C
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Avnet Americas | Trans MOSFET N-CH 800V 6.6A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP7N80C) RoHS: Compliant Min Qty: 521 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 0 |
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$1.1294 / $1.1707 | Buy Now |
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Bristol Electronics | 700 |
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RFQ | ||
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Quest Components | 6.6A, 800V, 1.9OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB | 560 |
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$1.4974 / $3.6300 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 6.6A, 800V, 1.9ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: Obsolete Min Qty: 1 | 73 |
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$1.0200 / $1.2800 | Buy Now |
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DISTI #
FQP7N80C
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Avnet Silica | Trans MOSFET NCH 800V 66A 3Pin3Tab TO220AB Rail (Alt: FQP7N80C) RoHS: Compliant Min Qty: 1000 Package Multiple: 50 Lead time: 100 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
FQP7N80C
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EBV Elektronik | Trans MOSFET NCH 800V 66A 3Pin3Tab TO220AB Rail (Alt: FQP7N80C) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock, ship today | 1300 |
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RFQ |
Part Details for FQP7N80C
FQP7N80C CAD Models
FQP7N80C Part Data Attributes
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FQP7N80C
onsemi
Buy Now
Datasheet
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Compare Parts:
FQP7N80C
onsemi
Power MOSFET, N-Channel, QFET®, 800 V, 7 A, 1.9 Ω, TO-220, TO-220-3, 1000-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220-3 | |
| Package Description | TO-220, 3 PIN | |
| Manufacturer Package Code | 340AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 2 Days | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 580 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 6.6 A | |
| Drain-source On Resistance-Max | 1.9 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 167 W | |
| Pulsed Drain Current-Max (IDM) | 26.4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FQP7N80C Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the FQP7N80C is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal characteristics and voltage ratings. A general rule of thumb is to limit the device's power dissipation to 50-70% of its maximum rating to ensure reliable operation.
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To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet. This includes setting the gate-source voltage (Vgs) within the recommended range (typically -2 to 2 V) and ensuring the drain-source voltage (Vds) is within the maximum rating (800 V). Additionally, consider using a gate driver or voltage regulator to maintain a stable bias voltage.
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For optimal thermal performance, use a multi-layer PCB with a solid ground plane and a thermal relief pattern under the device. Ensure good thermal conductivity by using a thermal interface material (TIM) between the device and heat sink. A heat sink with a thermal resistance of 1-2°C/W is recommended. Follow onsemi's application notes and PCB layout guidelines for more detailed information.
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To protect the FQP7N80C from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB is designed with ESD protection in mind (e.g., using ESD diodes or resistors). For overvoltage protection, consider using a voltage clamp or transient voltage suppressor (TVS) diode to limit voltage spikes.
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The recommended gate resistor value depends on the specific application and switching frequency. A general guideline is to use a gate resistor in the range of 10-100 ohms to limit the gate current and prevent oscillations. However, consult the datasheet and application notes for more specific guidance.