Part Details for FQP2N90 by onsemi
Results Overview of FQP2N90 by onsemi
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FQP2N90 Information
FQP2N90 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQP2N90
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2453441
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Farnell | MOSFET, N CH, 900V, 2.2A, TO-220AB-3 RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each | 584 |
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$0.9236 / $1.6597 | Buy Now |
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DISTI #
FQP2N90
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Avnet Americas | Trans MOSFET N-CH 900V 2.2A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP2N90) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 111 Weeks, 0 Days Container: Tube | 1236 |
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$0.6012 | Buy Now |
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Future Electronics | N-Channel 900 V 7.2 mΩ 85 W 12 nC QFET Mosfet - TO-220 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Container: Tube | 36Tube |
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$0.8000 / $0.9150 | Buy Now |
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DISTI #
85951815
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Verical | Trans MOSFET N-CH 900V 2.2A 3-Pin(3+Tab) TO-220 Tube Min Qty: 320 Package Multiple: 1 Date Code: 1901 | Americas - 1358 |
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$1.1734 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 2.2A, 900V, 7.2ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: Obsolete Min Qty: 1 | 1478 |
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$0.5820 / $0.9387 | Buy Now |
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Future Electronics | N-Channel 900 V 7.2 mO 85 W 12 nC QFET Mosfet - TO-220 Min Qty: 1 Package Multiple: 1 |
36 null |
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$0.8000 / $0.9150 | Buy Now |
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DISTI #
SMC-FQP2N90
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 4835 |
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RFQ | |
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DISTI #
FQP2N90
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Avnet Silica | Trans MOSFET NCH 900V 22A 3Pin3Tab TO220AB Rail (Alt: FQP2N90) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
FQP2N90
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EBV Elektronik | Trans MOSFET NCH 900V 22A 3Pin3Tab TO220AB Rail (Alt: FQP2N90) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock, ship today | 95000 |
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RFQ |
Part Details for FQP2N90
FQP2N90 CAD Models
FQP2N90 Part Data Attributes
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FQP2N90
onsemi
Buy Now
Datasheet
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Compare Parts:
FQP2N90
onsemi
Power MOSFET, N-Channel, QFET®, 900 V, 2.2 A, 7.2 Ω, TO-220, TO-220-3, 1000-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220-3 | |
| Package Description | TO-220, 3 PIN | |
| Manufacturer Package Code | 340AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 170 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 2.2 A | |
| Drain-source On Resistance-Max | 7.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 85 W | |
| Pulsed Drain Current-Max (IDM) | 8.8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FQP2N90 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the FQP2N90 is typically defined by the device's voltage and current ratings. For the FQP2N90, the maximum voltage rating is 900V and the maximum current rating is 2A. However, it's essential to consult the datasheet and application notes for specific guidance on SOA to ensure reliable operation.
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Proper thermal management is crucial for the FQP2N90. Ensure a good thermal interface between the device and the heat sink, and consider using a thermal interface material (TIM) to fill any gaps. The recommended thermal resistance (RθJA) for the FQP2N90 is 62°C/W. A heat sink with a thermal resistance of 10°C/W or lower is recommended to keep the junction temperature below 150°C.
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The recommended gate drive voltage for the FQP2N90 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's essential to consult the datasheet and application notes for guidance on gate drive voltage selection.
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To minimize EMI when using the FQP2N90, ensure proper PCB layout and design practices. Keep the power stage and gate drive circuitry close together, use a ground plane, and consider using shielding or a Faraday cage to contain EMI. Additionally, use a common-mode choke or EMI filter to reduce emissions.
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The recommended dead time for the FQP2N90 in a half-bridge configuration depends on the specific application and switching frequency. A general guideline is to set the dead time to at least 100ns to 200ns to ensure proper switching and minimize shoot-through currents. However, consult the datasheet and application notes for specific guidance on dead time selection.