Part Details for FQP13N50 by Fairchild Semiconductor Corporation
Results Overview of FQP13N50 by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
FQP13N50 Information
FQP13N50 by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQP13N50
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Power Field-Effect Transistor, 12.5A, 500V, 0.43ohm, N-Channel, MOSFET, TO-220AB RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 38 |
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$1.0100 / $1.2600 | Buy Now |
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Vyrian | Transistors | 35 |
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RFQ |
Part Details for FQP13N50
FQP13N50 CAD Models
FQP13N50 Part Data Attributes
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FQP13N50
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FQP13N50
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 12.5A I(D), 500V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | TO-220 | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | 3LD, TO220, JEDEC, MOLDED | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 810 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 12.5 A | |
| Drain-source On Resistance-Max | 0.43 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 170 W | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQP13N50
This table gives cross-reference parts and alternative options found for FQP13N50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP13N50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXFH16N50P3 | IXYS Corporation | $2.3874 | Power Field-Effect Transistor, 16A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN | FQP13N50 vs IXFH16N50P3 |
| IRFS620 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | FQP13N50 vs IRFS620 |
| NDP706A | National Semiconductor Corporation | Check for Price | TRANSISTOR 75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | FQP13N50 vs NDP706A |
| FQPF5N50C | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | FQP13N50 vs FQPF5N50C |
| FQP5P20 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 4.8A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | FQP13N50 vs FQP5P20 |
| FQP6N60C | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | FQP13N50 vs FQP6N60C |
| STP7NA40 | STMicroelectronics | Check for Price | 6.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | FQP13N50 vs STP7NA40 |
| MTD10N05E-1 | Motorola Mobility LLC | Check for Price | 10A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 | FQP13N50 vs MTD10N05E-1 |
| FQP13N10 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 12.8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | FQP13N50 vs FQP13N10 |
| FQP9N25C | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 8.8A I(D), 250V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | FQP13N50 vs FQP9N25C |
FQP13N50 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the FQP13N50 is not explicitly stated in the datasheet. However, Fairchild Semiconductor provides an SOA curve in the application note AN-9010, which can be used as a guideline for designing with this device.
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To ensure the FQP13N50 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate current should be sufficient to charge the gate capacitance quickly. A gate resistor value of 1-10 ohms is recommended to limit the gate current and prevent ringing.
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The maximum junction temperature (Tj) for the FQP13N50 is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to prevent thermal runaway.
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Yes, the FQP13N50 can be used in high-frequency switching applications. However, the device's switching characteristics, such as rise and fall times, should be considered to ensure that the device can handle the desired switching frequency. Additionally, the PCB layout and decoupling capacitors should be designed to minimize parasitic inductance and capacitance.
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To protect the FQP13N50 from electrostatic discharge (ESD), it's recommended to handle the device with an anti-static wrist strap or mat, and to use ESD-sensitive device handling procedures. Additionally, the device should be stored in an anti-static bag or tube to prevent ESD damage during storage and transportation.