Part Details for FQD6N60CTF by Fairchild Semiconductor Corporation
Results Overview of FQD6N60CTF by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FQD6N60CTF Information
FQD6N60CTF by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQD6N60CTF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 4A, 600V, 2ohm, N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 190 |
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$0.5652 / $0.9116 | Buy Now |
Part Details for FQD6N60CTF
FQD6N60CTF CAD Models
FQD6N60CTF Part Data Attributes
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FQD6N60CTF
Fairchild Semiconductor Corporation
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Datasheet
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FQD6N60CTF
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | FAST SWITCHING | |
| Avalanche Energy Rating (Eas) | 300 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 80 W | |
| Pulsed Drain Current-Max (IDM) | 16 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FQD6N60CTF Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the FQD6N60CTF is not explicitly stated in the datasheet. However, Fairchild Semiconductor recommends following the SOA curves provided in the application note AN-9010, which provides guidelines for ensuring safe operation of the device.
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To ensure proper thermal management, it's essential to follow the thermal resistance and junction-to-case thermal resistance (RθJC) values provided in the datasheet. Additionally, Fairchild recommends using a heat sink with a thermal interface material (TIM) and ensuring good airflow around the device.
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The recommended gate drive voltage for the FQD6N60CTF is between 10V and 15V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
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While the FQD6N60CTF is suitable for high-frequency switching applications, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the application's switching frequency is within the device's capabilities.
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To handle ESD protection, it's recommended to follow proper handling and storage procedures, such as using an ESD wrist strap or mat, and ensuring that the device is stored in an ESD-protected environment.