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Power MOSFET, N-Channel, QFET®, 250 V, 16 A, 270 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FQD16N25CTM by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
75M2471
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Newark | N Channel Mosfet, 250V, 16A, D-Pak, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:16A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Onsemi FQD16N25CTM RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 16241 |
|
$0.5290 / $0.6250 | Buy Now |
DISTI #
87X8792
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Newark | Mosfet Transistor, N Channel, 16 A, 250 V, 220 Mohm, 10 V, 4 V Rohs Compliant: Yes |Onsemi FQD16N25CTM RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 10993 |
|
$0.5820 / $0.6350 | Buy Now |
DISTI #
04M9364
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Newark | Mosfet (Metal-Oxide-Semiconductor Field-Effect Transistor) Rohs Compliant: Yes |Onsemi FQD16N25CTM RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.4860 / $0.6330 | Buy Now |
DISTI #
FQD16N25CTMCT-ND
|
DigiKey | MOSFET N-CH 250V 16A DPAK Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
54152 In Stock |
|
$0.4459 / $1.3800 | Buy Now |
DISTI #
75M2471
|
Avnet Americas | Trans MOSFET N-CH 250V 16A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 75M2471) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 71 Weeks, 4 Days Container: Ammo Pack | 16221 Partner Stock |
|
$0.5550 / $1.4400 | Buy Now |
DISTI #
87X8792
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Avnet Americas | Trans MOSFET N-CH 250V 16A 3-Pin(2+Tab) DPAK T/R - Bulk (Alt: 87X8792) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk | 1213 Partner Stock |
|
$0.6880 / $1.5700 | Buy Now |
DISTI #
FQD16N25CTM
|
Avnet Americas | Trans MOSFET N-CH 250V 16A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD16N25CTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
|
$0.4042 / $0.4190 | Buy Now |
DISTI #
512-FQD16N25CTM
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Mouser Electronics | MOSFETs HIGH VOLTAGE RoHS: Compliant | 27100 |
|
$0.4420 / $1.3500 | Buy Now |
DISTI #
E02:0323_00846569
|
Arrow Electronics | Trans MOSFET N-CH 250V 16A 3-Pin(2+Tab) DPAK T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks | Europe - 2500 |
|
$0.4388 / $0.4503 | Buy Now |
DISTI #
V72:2272_06301236
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Arrow Electronics | Trans MOSFET N-CH 250V 16A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2227 Container: Cut Strips | Americas - 2105 |
|
$0.4406 / $1.0858 | Buy Now |
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FQD16N25CTM
onsemi
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Datasheet
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Compare Parts:
FQD16N25CTM
onsemi
Power MOSFET, N-Channel, QFET®, 250 V, 16 A, 270 mΩ, DPAK, DPAK-3 / TO-252-3, 2500-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | DPAK-3 / TO-252-3 | |
Package Description | DPAK-3 | |
Manufacturer Package Code | 369AS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | onsemi | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 432 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 250 V | |
Drain Current-Max (ID) | 16 A | |
Drain-source On Resistance-Max | 0.27 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 160 W | |
Pulsed Drain Current-Max (IDM) | 64 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum junction temperature that the FQD16N25CTM can withstand is 150°C.
To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
The recommended gate drive voltage for the FQD16N25CTM is between 10V and 15V, with a maximum of 20V.
Yes, the FQD16N25CTM is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly cooled and the gate drive voltage is optimized for the specific application.
To protect the FQD16N25CTM from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.