Part Details for FQB8N60CFTM by Rochester Electronics LLC
Results Overview of FQB8N60CFTM by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FQB8N60CFTM Information
FQB8N60CFTM by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for FQB8N60CFTM
FQB8N60CFTM CAD Models
FQB8N60CFTM Part Data Attributes
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FQB8N60CFTM
Rochester Electronics LLC
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Datasheet
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FQB8N60CFTM
Rochester Electronics LLC
6.26A, 600V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Package Description | D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 160 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 6.26 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 25 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQB8N60CFTM
This table gives cross-reference parts and alternative options found for FQB8N60CFTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB8N60CFTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| STB4NK60ZT4 | STMicroelectronics | $0.6330 | N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in D2PAK package | FQB8N60CFTM vs STB4NK60ZT4 |
| 2SK3116-ZJ | Renesas Electronics Corporation | Check for Price | 7.5A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, 3 PIN | FQB8N60CFTM vs 2SK3116-ZJ |
| 2SK3299-ZJ | Renesas Electronics Corporation | Check for Price | 10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, TO-263, 3 PIN | FQB8N60CFTM vs 2SK3299-ZJ |
| 2SK3889-01S | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 9A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | FQB8N60CFTM vs 2SK3889-01S |
| IRFBC40STRLPBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | FQB8N60CFTM vs IRFBC40STRLPBF |
| STB3NB60T4 | STMicroelectronics | Check for Price | 3.3A, 600V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 | FQB8N60CFTM vs STB3NB60T4 |
| FQB6N60C | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | FQB8N60CFTM vs FQB6N60C |
| FK7VS-12 | Mitsubishi Electric | Check for Price | Power Field-Effect Transistor, 7A I(D), 600V, 1.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FQB8N60CFTM vs FK7VS-12 |
| FQB5N60 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | FQB8N60CFTM vs FQB5N60 |
| 2SK3116-ZJ | NEC Electronics Group | Check for Price | Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, MP-25ZJ, 3 PIN | FQB8N60CFTM vs 2SK3116-ZJ |