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Part Details for FQB5N90TM by onsemi
Results Overview of FQB5N90TM by onsemi
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FQB5N90TM Information
FQB5N90TM by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQB5N90TM
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2459579
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element14 Asia-Pacific | MOSFET, N CHANNEL, 900V, 1.8OHM, 5.4A, T RoHS: Compliant Min Qty: 1 Container: Cut Tape | 4795 |
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$1.5200 / $2.5100 | Buy Now |
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DISTI #
FQB5N90TMCT-ND
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DigiKey | MOSFET N-CH 900V 5.4A D2PAK Min Qty: 1 Lead time: 7 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1089 In Stock |
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$1.3691 / $2.2300 | Buy Now |
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DISTI #
FQB5N90TM
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Avnet Americas | Trans MOSFET N-CH 900V 5.4A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB5N90TM) RoHS: Compliant Min Qty: 468 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 800 Partner Stock |
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$1.2556 / $1.3718 | Buy Now |
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DISTI #
FQB5N90TM
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Avnet Americas | Trans MOSFET N-CH 900V 5.4A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB5N90TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 7 Weeks, 0 Days Container: Reel | 800 Factory Stock |
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$1.2886 / $1.3357 | Buy Now |
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DISTI #
512-FQB5N90TM
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Mouser Electronics | MOSFETs 900V N-Channel QFET RoHS: Compliant | 14172 |
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$1.3600 / $2.1700 | Buy Now |
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DISTI #
E02:0323_00847325
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Arrow Electronics | Trans MOSFET N-CH 900V 5.4A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 7 Weeks Date Code: 2413 | Europe - 15200 |
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$1.3663 | Buy Now |
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Onlinecomponents.com | N-Channel Power MOSFET, QFET®, 900 V, 5.4 A, 2.3 Ω, D2PAK RoHS: Compliant | 0 |
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$1.3400 / $1.5600 | Buy Now |
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DISTI #
FQB5N90TM
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TME | Transistor: N-MOSFET, unipolar, 900V, 3.42A, 158W, D2PAK Min Qty: 1 | 771 |
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$1.7000 / $2.6300 | Buy Now |
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DISTI #
FQB5N90TM
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 800 | 0 |
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$1.3700 | Buy Now |
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DISTI #
FQB5N90TM
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Avnet Asia | Trans MOSFET N-CH 900V 5.4A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB5N90TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 7 Weeks, 0 Days | 0 |
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$1.2886 / $1.4412 | Buy Now |
Part Details for FQB5N90TM
FQB5N90TM CAD Models
FQB5N90TM Part Data Attributes
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FQB5N90TM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQB5N90TM
onsemi
Power MOSFET, N-Channel, QFET®, 900 V, 5.4 A, 2.3 Ω, D2PAK, D2PAK-3 / TO-263-2, 800-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | D2PAK-3 / TO-263-2 | |
| Package Description | D2PAK-3 | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 2 Days | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 660 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 5.4 A | |
| Drain-source On Resistance-Max | 2.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 158 W | |
| Pulsed Drain Current-Max (IDM) | 21.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FQB5N90TM Frequently Asked Questions (FAQ)
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The maximum SOA for the FQB5N90TM is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's voltage, current, and power ratings, as well as its thermal impedance and maximum junction temperature.
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To ensure proper biasing, follow the recommended operating conditions and biasing schemes outlined in the datasheet. Additionally, consider the device's gate-source voltage, drain-source voltage, and current ratings when designing the bias circuit. It's also essential to ensure the device is operated within its recommended temperature range.
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Thermal management is crucial for the FQB5N90TM. Ensure proper heat sinking, and consider the device's thermal impedance, maximum junction temperature, and power dissipation when designing the thermal management system. A heat sink with a thermal resistance of less than 1°C/W is recommended.
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To protect the FQB5N90TM from ESD, follow proper handling and storage procedures. Use anti-static wrist straps, mats, and packaging materials. Ensure that the device is handled in an ESD-controlled environment, and consider using ESD protection devices or circuits in the design.
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For optimal performance and reliability, follow good PCB design practices, such as minimizing trace lengths, using wide traces for power and ground, and ensuring proper decoupling. Consider the device's pinout, thermal management, and EMI/EMC requirements when designing the PCB.