Part Details for FQB5N90TM by Fairchild Semiconductor Corporation
Results Overview of FQB5N90TM by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FQB5N90TM Information
FQB5N90TM by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQB5N90TM
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FQB5N90TM
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IBS Electronics | FQB5N90TM by Fairchild is an N-Channel 900V, 2.3 Ohm enhancement mode power MOSFET in a D2PAK-3 package, ideal for high-voltage applications with efficient switching performance. Min Qty: 800 Package Multiple: 1 | 0 |
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$1.7030 / $1.7420 | Buy Now |
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Vyrian | Transistors | 11054 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 900V 5.4A D2PAK | 8000 |
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$1.6012 / $2.0681 | Buy Now |
Part Details for FQB5N90TM
FQB5N90TM CAD Models
FQB5N90TM Part Data Attributes
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FQB5N90TM
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FQB5N90TM
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5.4A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | D2PAK | |
| Package Description | ROHS COMPLIANT, D2PAK-3 | |
| Pin Count | 2 | |
| Manufacturer Package Code | 2LD,TO263, SURFACE MOUNT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 660 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 5.4 A | |
| Drain-source On Resistance-Max | 2.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 158 W | |
| Pulsed Drain Current-Max (IDM) | 21.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FQB5N90TM Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the FQB5N90TM is -55°C to 150°C.
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To ensure proper biasing, the FQB5N90TM requires a gate-source voltage (Vgs) between 2V to 5V, and a drain-source voltage (Vds) between 10V to 90V. Additionally, a gate resistor (Rg) of 1kΩ to 10kΩ is recommended to prevent oscillations.
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The maximum current rating for the FQB5N90TM is 5A, with a pulsed current rating of 10A.
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To protect the FQB5N90TM from ESD, handle the device with an anti-static wrist strap or mat, and ensure that all equipment and tools are properly grounded. Avoid touching the device's pins or leads with bare hands.
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Yes, the FQB5N90TM is suitable for switching applications due to its low Rds(on) and high switching speed. However, ensure that the device is properly biased and that the switching frequency is within the recommended range.