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Part Details for FQB33N10TM by onsemi
Results Overview of FQB33N10TM by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
FQB33N10TM Information
FQB33N10TM by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQB33N10TM
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FQB33N10TM
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TME | Transistor: N-MOSFET, unipolar, 100V, 23A, 127W, D2PAK Min Qty: 1 | 0 |
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$0.7500 / $1.1400 | RFQ |
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DISTI #
FQB33N10TM
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Avnet Silica | Trans MOSFET NCH 100V 33A 3Pin2Tab D2PAK TR (Alt: FQB33N10TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
FQB33N10TM
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EBV Elektronik | Trans MOSFET NCH 100V 33A 3Pin2Tab D2PAK TR (Alt: FQB33N10TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for FQB33N10TM
FQB33N10TM CAD Models
FQB33N10TM Part Data Attributes
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FQB33N10TM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQB33N10TM
onsemi
Power MOSFET, N-Channel, QFET®, 100 V, 33 A, 52 mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | D2PAK-3 / TO-263-2 | |
| Package Description | D2PAK-3 | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 2 Days | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 435 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.052 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 127 W | |
| Pulsed Drain Current-Max (IDM) | 132 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQB33N10TM
This table gives cross-reference parts and alternative options found for FQB33N10TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB33N10TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FQB33N10TM | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | FQB33N10TM vs FQB33N10TM |
FQB33N10TM Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the FQB33N10TM is -55°C to 150°C.
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To ensure proper biasing, follow the recommended biasing circuit and voltage levels outlined in the datasheet, and ensure the device is operated within the recommended operating conditions.
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For optimal thermal performance, use a multi-layer PCB with a thermal pad connected to a heat sink or a thermal interface material. Ensure good thermal conductivity and minimal thermal resistance between the device and the heat sink.
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Follow proper ESD handling procedures, such as using an ESD wrist strap or mat, and ensure the device is stored in an ESD-protected environment. Use ESD-protected packaging and handling equipment to prevent damage during transportation and storage.
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Use a soldering iron with a temperature range of 250°C to 260°C, and ensure the soldering time is within 3-5 seconds. Use a solder with a melting point above 217°C, and follow the recommended assembly and soldering guidelines outlined in the datasheet.