Part Details for FQB33N10TM by Fairchild Semiconductor Corporation
Results Overview of FQB33N10TM by Fairchild Semiconductor Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
FQB33N10TM Information
FQB33N10TM by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQB33N10TM
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 45 |
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RFQ | ||
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Bristol Electronics | 3 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 33A I(D), 100V, 0.052OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | 36 |
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$2.7200 / $4.0800 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ | |
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Vyrian | Transistors | 8 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 100V 33A D2PAK | 3200 |
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$11.6313 / $17.4470 | Buy Now |
Part Details for FQB33N10TM
FQB33N10TM CAD Models
FQB33N10TM Part Data Attributes
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FQB33N10TM
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FQB33N10TM
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | D2PAK | |
| Package Description | D2PAK-3 | |
| Pin Count | 2 | |
| Manufacturer Package Code | 2LD,TO263, SURFACE MOUNT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 435 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.052 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 127 W | |
| Pulsed Drain Current-Max (IDM) | 132 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQB33N10TM
This table gives cross-reference parts and alternative options found for FQB33N10TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB33N10TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FQB33N10 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | FQB33N10TM vs FQB33N10 |
FQB33N10TM Frequently Asked Questions (FAQ)
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The maximum junction temperature for the FQB33N10TM is 150°C. It's essential to ensure that the device does not exceed this temperature to prevent damage or malfunction.
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To calculate the power dissipation of the FQB33N10TM, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance. The formula is: Power Dissipation (PD) = Voltage Drop (VD) x Current (I) x Thermal Resistance (RθJA).
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The recommended gate resistor value for the FQB33N10TM is typically between 10 ohms to 100 ohms. However, the optimal value depends on the specific application, switching frequency, and gate drive voltage. It's essential to consult the datasheet and application notes for more information.
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Yes, the FQB33N10TM is suitable for high-frequency switching applications due to its low gate charge and fast switching times. However, it's crucial to ensure that the device is properly driven and that the layout is optimized to minimize parasitic inductance and capacitance.
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To protect the FQB33N10TM from ESD, it's essential to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. Additionally, ensure that the device is stored in an anti-static bag or container when not in use.