Datasheets
FQB30N06L by:
Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 32A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

Part Details for FQB30N06L by Fairchild Semiconductor Corporation

Results Overview of FQB30N06L by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

FQB30N06L Information

FQB30N06L by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for FQB30N06L

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FQB30N06L Part Data Attributes

FQB30N06L Fairchild Semiconductor Corporation
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FQB30N06L Fairchild Semiconductor Corporation Power Field-Effect Transistor, 32A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code D2PAK
Package Description D2PAK-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 350 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 32 A
Drain-source On Resistance-Max 0.045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 79 W
Pulsed Drain Current-Max (IDM) 128 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQB30N06L

This table gives cross-reference parts and alternative options found for FQB30N06L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB30N06L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FQB30N06LTM Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 32A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 FQB30N06L vs FQB30N06LTM
FQB30N06LTM onsemi Check for Price Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 32 A, 35 mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL FQB30N06L vs FQB30N06LTM
FQB30N06TM Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 FQB30N06L vs FQB30N06TM
FQB30N06 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 FQB30N06L vs FQB30N06

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