Part Details for FQB27N25TM by Rochester Electronics LLC
Results Overview of FQB27N25TM by Rochester Electronics LLC
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- CAD Models: (Request Part)
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- Part Data Attributes: (Available)
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FQB27N25TM Information
FQB27N25TM by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for FQB27N25TM
FQB27N25TM CAD Models
FQB27N25TM Part Data Attributes
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FQB27N25TM
Rochester Electronics LLC
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Datasheet
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FQB27N25TM
Rochester Electronics LLC
25.5A, 250V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, D2PAK-3
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Part Life Cycle Code | Active | |
Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
Part Package Code | TO-263 | |
Package Description | D2PAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
Avalanche Energy Rating (Eas) | 600 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 250 V | |
Drain Current-Max (ID) | 25.5 A | |
Drain-source On Resistance-Max | 0.11 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 102 A | |
Qualification Status | COMMERCIAL | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |