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Power MOSFET, P-Channel, QFET®, -200 V, -11.5 A, 470 mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FQB12P20TM by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
84Y9963
|
Newark | Mosfet, P-Ch, -200V, -11.5A, To-263-3, Transistor Polarity:P Channel, Continuous Drain Current Id:-11.5A, Drain Source Voltage Vds:-200V, On Resistance Rds(On):0.36Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-5V, Power Rohs Compliant: Yes |Onsemi FQB12P20TM RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 4741 |
|
$1.7000 / $3.2300 | Buy Now |
DISTI #
82C3926
|
Newark | P Channel Mosfet, -200V, 11.5Ma, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:11.5Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Onsemi FQB12P20TM RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.8810 / $1.1600 | Buy Now |
DISTI #
FQB12P20TMCT-ND
|
DigiKey | MOSFET P-CH 200V 11.5A D2PAK Min Qty: 1 Lead time: 6 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
3178 In Stock |
|
$0.8365 / $2.4300 | Buy Now |
DISTI #
FQB12P20TM
|
Avnet Americas | Power MOSFET, P Channel, 200 V, 11.5 A, 0.36 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: FQB12P20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 5 Weeks, 0 Days Container: Reel | 0 |
|
$0.7742 / $0.8026 | Buy Now |
DISTI #
512-FQB12P20TM
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Mouser Electronics | MOSFETs 200V P-Channel QFET RoHS: Compliant | 21244 |
|
$0.8770 / $2.3100 | Buy Now |
DISTI #
V72:2272_06339635
|
Arrow Electronics | Trans MOSFET P-CH 200V 11.5A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 5 Weeks Date Code: 2343 Container: Cut Strips | Americas - 450 |
|
$0.8833 / $2.2630 | Buy Now |
|
Onlinecomponents.com | P-Channel Power MOSFET, QFET®, -200 V, -11.5 A, 470 mΩ, D2PAK RoHS: Compliant |
800 In Stock |
|
$0.8500 / $0.8760 | Buy Now |
DISTI #
87891576
|
Verical | Trans MOSFET P-CH 200V 11.5A 3-Pin(2+Tab) D2PAK T/R Min Qty: 31 Package Multiple: 1 | Americas - 971 |
|
$1.1700 / $2.1700 | Buy Now |
DISTI #
87898455
|
Verical | Trans MOSFET P-CH 200V 11.5A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Date Code: 2510 | Americas - 800 |
|
$1.1050 / $1.1388 | Buy Now |
DISTI #
84344861
|
Verical | Trans MOSFET P-CH 200V 11.5A 3-Pin(2+Tab) D2PAK T/R Min Qty: 7 Package Multiple: 1 Date Code: 2343 | Americas - 450 |
|
$0.8833 / $2.2630 | Buy Now |
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FQB12P20TM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQB12P20TM
onsemi
Power MOSFET, P-Channel, QFET®, -200 V, -11.5 A, 470 mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | D2PAK-3 / TO-263-2 | |
Manufacturer Package Code | 418AJ | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 5 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | FAST SWITCHING | |
Avalanche Energy Rating (Eas) | 810 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 11.5 A | |
Drain-source On Resistance-Max | 0.47 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 120 W | |
Pulsed Drain Current-Max (IDM) | 46 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device.
Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system design accordingly.
A non-inverting gate driver with a high current capability (e.g., TC4420 or equivalent) is recommended. Ensure the driver can provide a minimum of 2A peak current and has a propagation delay of <10ns.
Implement a robust overvoltage protection (OVP) circuit and consider adding a current sense resistor with an overcurrent protection (OCP) circuit. Ensure the OVP and OCP circuits can respond quickly to fault conditions.
Keep the layout compact, use a solid ground plane, and minimize loop areas. Ensure the device's pins are connected to the PCB with short, direct traces. Use shielding and filtering components as necessary.