Datasheets
FQB12P20TM by:

Power MOSFET, P-Channel, QFET®, -200 V, -11.5 A, 470 mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL

Part Details for FQB12P20TM by onsemi

Results Overview of FQB12P20TM by onsemi

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FQB12P20TM Information

FQB12P20TM by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FQB12P20TM

Part # Distributor Description Stock Price Buy
DISTI # 84Y9963
Newark Mosfet, P-Ch, -200V, -11.5A, To-263-3, Transistor Polarity:P Channel, Continuous Drain Current Id:-11.5A, Drain Source Voltage Vds:-200V, On Resistance Rds(On):0.36Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-5V, Power Rohs Compliant: Yes |Onsemi FQB12P20TM RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 4741
  • 1 $3.2300
  • 10 $2.2600
  • 25 $2.0700
  • 50 $1.8900
  • 100 $1.7000
$1.7000 / $3.2300 Buy Now
DISTI # 82C3926
Newark P Channel Mosfet, -200V, 11.5Ma, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:11.5Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Onsemi FQB12P20TM RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $1.1600
  • 3,000 $1.1000
  • 6,000 $1.0500
  • 12,000 $0.9470
  • 18,000 $0.9140
  • 30,000 $0.8810
$0.8810 / $1.1600 Buy Now
DISTI # FQB12P20TMCT-ND
DigiKey MOSFET P-CH 200V 11.5A D2PAK Min Qty: 1 Lead time: 6 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 3178
In Stock
  • 1 $2.4300
  • 10 $1.7330
  • 100 $1.2350
  • 800 $0.9402
  • 1,600 $0.8719
  • 2,400 $0.8398
  • 4,000 $0.8365
$0.8365 / $2.4300 Buy Now
DISTI # FQB12P20TM
Avnet Americas Power MOSFET, P Channel, 200 V, 11.5 A, 0.36 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: FQB12P20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 5 Weeks, 0 Days Container: Reel 0
  • 800 $0.8026
  • 1,600 $0.7929
  • 3,200 $0.7834
  • 4,800 $0.7797
  • 6,400 $0.7742
$0.7742 / $0.8026 Buy Now
DISTI # 512-FQB12P20TM
Mouser Electronics MOSFETs 200V P-Channel QFET RoHS: Compliant 21244
  • 1 $2.3100
  • 10 $1.6500
  • 100 $1.3000
  • 500 $1.1400
  • 800 $0.9310
  • 2,400 $0.8840
  • 4,800 $0.8770
$0.8770 / $2.3100 Buy Now
DISTI # V72:2272_06339635
Arrow Electronics Trans MOSFET P-CH 200V 11.5A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 5 Weeks Date Code: 2343 Container: Cut Strips Americas - 450
  • 1 $2.2630
  • 10 $1.6305
  • 25 $1.6142
  • 100 $1.2271
  • 250 $0.8833
$0.8833 / $2.2630 Buy Now
Onlinecomponents.com P-Channel Power MOSFET, QFET®, -200 V, -11.5 A, 470 mΩ, D2PAK RoHS: Compliant 800 In Stock
  • 800 $0.8760
  • 1,600 $0.8670
  • 3,200 $0.8590
  • 5,600 $0.8550
  • 8,000 $0.8500
$0.8500 / $0.8760 Buy Now
DISTI # 87891576
Verical Trans MOSFET P-CH 200V 11.5A 3-Pin(2+Tab) D2PAK T/R Min Qty: 31 Package Multiple: 1 Americas - 971
  • 31 $2.1700
  • 50 $1.5600
  • 100 $1.5400
  • 500 $1.1700
$1.1700 / $2.1700 Buy Now
DISTI # 87898455
Verical Trans MOSFET P-CH 200V 11.5A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Date Code: 2510 Americas - 800
  • 800 $1.1388
  • 1,600 $1.1271
  • 3,200 $1.1167
  • 5,600 $1.1115
  • 8,000 $1.1050
$1.1050 / $1.1388 Buy Now
DISTI # 84344861
Verical Trans MOSFET P-CH 200V 11.5A 3-Pin(2+Tab) D2PAK T/R Min Qty: 7 Package Multiple: 1 Date Code: 2343 Americas - 450
  • 7 $2.2630
  • 10 $1.6305
  • 25 $1.6142
  • 100 $1.2271
  • 250 $0.8833
$0.8833 / $2.2630 Buy Now
DISTI # FQB12P20TM
TME Transistor: P-MOSFET, unipolar, -200V, -7.27A, 120W, D2PAK Min Qty: 1 770
  • 1 $1.7100
  • 5 $1.5300
  • 25 $1.3600
  • 100 $1.2200
  • 800 $1.1300
$1.1300 / $1.7100 Buy Now
ComSIT USA QFET 200 V P-CHANNEL MOSFET Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB ECCN: EAR99 RoHS: Compliant Stock DE - 260
Stock ES - 142
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # FQB12P20TM
IBS Electronics P-CHANNEL POWER MOSFET QFET&#xAE, -200 V -11.5 A 470 M&#x2126, D2PAK Min Qty: 800 Package Multiple: 1 800
  • 800 $1.1388
  • 1,600 $1.1271
  • 3,200 $1.1167
  • 5,600 $1.1115
  • 8,000 $1.1050
$1.1050 / $1.1388 Buy Now
DISTI # FQB12P20TM
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 800 0
  • 800 $0.8200
$0.8200 Buy Now
DISTI # FQB12P20TM
Avnet Asia Power MOSFET, P Channel, 200 V, 11.5 A, 0.36 ohm, TO-263 (D2PAK), Surface Mount (Alt: FQB12P20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 5 Weeks, 0 Days 0
  • 800 $0.8659
  • 1,600 $0.8547
  • 2,400 $0.8437
  • 4,000 $0.8330
  • 8,000 $0.8125
  • 20,000 $0.7929
  • 40,000 $0.7742
$0.7742 / $0.8659 Buy Now
DISTI # FQB12P20TM
Avnet Silica Power MOSFET P Channel 200 V 115 A 036 ohm TO263 D2PAK Surface Mount (Alt: FQB12P20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 6 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FQB12P20TM
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape 971
  • 1 $2.1700
  • 10 $1.5600
  • 50 $1.5400
  • 100 $1.1700
  • 500 $0.9770
  • 1,600 $0.9740
  • 3,200 $0.8590
  • 6,400 $0.8580
  • 12,800 $0.8560
$0.8560 / $2.1700 Buy Now
Chip-Germany GmbH   RoHS: Not Compliant 260
RFQ
DISTI # FQB12P20TM
EBV Elektronik Power MOSFET P Channel 200 V 115 A 036 ohm TO263 D2PAK Surface Mount (Alt: FQB12P20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 7 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics P-Channel Power MOSFET, QFET®, -200 V, -11.5 A, 470 mΩ, D2PAK RoHS: Compliant 800 In Stock
  • 800 $0.8760
  • 1,600 $0.8670
  • 3,200 $0.8590
  • 5,600 $0.8550
  • 8,000 $0.8500
$0.8500 / $0.8760 Buy Now

Part Details for FQB12P20TM

FQB12P20TM CAD Models

FQB12P20TM Part Data Attributes

FQB12P20TM onsemi
Buy Now Datasheet
Compare Parts:
FQB12P20TM onsemi Power MOSFET, P-Channel, QFET®, -200 V, -11.5 A, 470 mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code D2PAK-3 / TO-263-2
Manufacturer Package Code 418AJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 5 Weeks
Samacsys Manufacturer onsemi
Additional Feature FAST SWITCHING
Avalanche Energy Rating (Eas) 810 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 11.5 A
Drain-source On Resistance-Max 0.47 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 120 W
Pulsed Drain Current-Max (IDM) 46 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

FQB12P20TM Related Parts

FQB12P20TM Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device.

  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system design accordingly.

  • A non-inverting gate driver with a high current capability (e.g., TC4420 or equivalent) is recommended. Ensure the driver can provide a minimum of 2A peak current and has a propagation delay of <10ns.

  • Implement a robust overvoltage protection (OVP) circuit and consider adding a current sense resistor with an overcurrent protection (OCP) circuit. Ensure the OVP and OCP circuits can respond quickly to fault conditions.

  • Keep the layout compact, use a solid ground plane, and minimize loop areas. Ensure the device's pins are connected to the PCB with short, direct traces. Use shielding and filtering components as necessary.

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