Part Details for FQA55N25 by onsemi
Results Overview of FQA55N25 by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FQA55N25 Information
FQA55N25 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQA55N25
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
23M6299
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Newark | Mosfet, N, To-3P, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:55A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Power Dissipation:310W, Msl:-Rohs Compliant: Yes |Onsemi FQA55N25 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
85983537
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Verical | Trans MOSFET N-CH 250V 55A 3-Pin(3+Tab) TO-3P Tube Min Qty: 64 Package Multiple: 1 Date Code: 2201 | Americas - 312 |
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$4.7625 / $5.9500 | Buy Now |
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Rochester Electronics | Power MOSFET, N-Channel, QFET, 250 V, 55 A, TO-3P RoHS: Compliant Status: Obsolete Min Qty: 1 | 312 |
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$3.8100 / $4.7600 | Buy Now |
Part Details for FQA55N25
FQA55N25 CAD Models
FQA55N25 Part Data Attributes
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FQA55N25
onsemi
Buy Now
Datasheet
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FQA55N25
onsemi
Power MOSFET, N-Channel, QFET®, 250 V, 55 A, 40 mΩ, TO-3P, TO-3P-3L, 450-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-3P-3L | |
| Package Description | TO-3PN, 3 PIN | |
| Manufacturer Package Code | 340BZ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 55 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 310 W | |
| Pulsed Drain Current-Max (IDM) | 220 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FQA55N25 Frequently Asked Questions (FAQ)
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The maximum junction temperature of the FQA55N25 is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
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To ensure proper biasing, make sure to provide a stable gate-source voltage (Vgs) between 2V to 5V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the gate current is limited to the recommended maximum value.
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For optimal thermal performance, use a PCB with a thick copper layer (at least 2 oz) and a thermal relief pattern under the device. Ensure good thermal conductivity between the device and the heat sink. A thermal interface material (TIM) can be used to improve heat transfer.
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Yes, the FQA55N25 is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly biased and the PCB layout is optimized for high-frequency operation to minimize parasitic inductance and capacitance.
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To protect the FQA55N25 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB has ESD protection circuits, such as TVS diodes or ESD protection arrays, to prevent damage from static electricity.