Part Details for FQA38N30 by Rochester Electronics LLC
Results Overview of FQA38N30 by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FQA38N30 Information
FQA38N30 by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for FQA38N30
FQA38N30 CAD Models
FQA38N30 Part Data Attributes
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FQA38N30
Rochester Electronics LLC
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Datasheet
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FQA38N30
Rochester Electronics LLC
38.4A, 300V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | TO-3P | |
| Package Description | TO-3P, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 300 V | |
| Drain Current-Max (ID) | 38.4 A | |
| Drain-source On Resistance-Max | 0.085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | NOT APPLICABLE | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 153.6 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQA38N30
This table gives cross-reference parts and alternative options found for FQA38N30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQA38N30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FQPF10N60C | Rochester Electronics LLC | Check for Price | 9.5A, 600V, 0.73ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, TO-220F, 3 PIN | FQA38N30 vs FQPF10N60C |
| FQA15N70 | Rochester Electronics LLC | Check for Price | 15A, 700V, 0.56ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P, 3 PIN | FQA38N30 vs FQA15N70 |
| FQP4N90 | Rochester Electronics LLC | Check for Price | 4.2A, 900V, 3.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | FQA38N30 vs FQP4N90 |
| FQP6N50C | Rochester Electronics LLC | Check for Price | 5.5A, 500V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | FQA38N30 vs FQP6N50C |
| FDB2572 | Rochester Electronics LLC | Check for Price | 4A, 150V, 0.054ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN | FQA38N30 vs FDB2572 |
| SPP04N60S5 | Rochester Electronics LLC | Check for Price | 4.5A, 600V, 0.95ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN | FQA38N30 vs SPP04N60S5 |
| ISL9N312AS3ST | Rochester Electronics LLC | Check for Price | 58A, 30V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | FQA38N30 vs ISL9N312AS3ST |
| RFP12N18 | Rochester Electronics LLC | Check for Price | 12A, 180V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | FQA38N30 vs RFP12N18 |
| IRF448 | International Rectifier | Check for Price | Power Field-Effect Transistor, 9.6A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | FQA38N30 vs IRF448 |
| IRFIP054 | International Rectifier | Check for Price | Power Field-Effect Transistor, 64A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | FQA38N30 vs IRFIP054 |