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Part Details for FQA36P15 by onsemi
Results Overview of FQA36P15 by onsemi
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
FQA36P15 Information
FQA36P15 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQA36P15
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
61M6400
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Newark | Mosfet Transistor, P Channel, -36 A, -150 V, 90 Mohm, -10 V, -4 V Rohs Compliant: Yes |Onsemi FQA36P15 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
45J3232
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Newark | P Channel Mosfet, -150V, 36A, To-3P, Channel Type:P Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:36A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Onsemi FQA36P15 RoHS: Compliant Min Qty: 120 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$1.9700 / $2.4300 | Buy Now |
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DISTI #
FQA36P15-ND
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DigiKey | MOSFET P-CH 150V 36A TO3PN Min Qty: 450 Lead time: 10 Weeks Container: Tube | Temporarily Out of Stock |
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$2.3936 | Buy Now |
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DISTI #
FQA36P15
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Avnet Americas | Trans MOSFET P-CH 150V 36A 3-Pin(3+Tab) TO-3P(N) T/R - Rail/Tube (Alt: FQA36P15) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 111 Weeks, 0 Days Container: Tube | 30 |
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RFQ | |
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DISTI #
512-FQA36P15
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Mouser Electronics | MOSFETs 150V P-Channel QFET RoHS: Compliant | 0 |
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$2.3600 / $4.9300 | Order Now |
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DISTI #
FQA36P15
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TME | Transistor: P-MOSFET, unipolar, -150V, -25.5A, 294W, TO3PN Min Qty: 1 | 0 |
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$2.6600 / $3.9900 | RFQ |
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DISTI #
FQA36P15
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Avnet Silica | Trans MOSFET PCH 150V 36A 3Pin3Tab TO3PN TR (Alt: FQA36P15) RoHS: Compliant Min Qty: 450 Package Multiple: 30 Lead time: 8 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
FQA36P15
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EBV Elektronik | Trans MOSFET PCH 150V 36A 3Pin3Tab TO3PN TR (Alt: FQA36P15) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 8 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Flip Electronics | Stock, ship today | 112500 |
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RFQ |
Part Details for FQA36P15
FQA36P15 CAD Models
FQA36P15 Part Data Attributes
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FQA36P15
onsemi
Buy Now
Datasheet
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Compare Parts:
FQA36P15
onsemi
Power MOSFET, P-Channel, QFET®, -150 V, -36 A, 90 mΩ, TO-3P, TO-3P-3L, 450-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-3P-3L | |
| Manufacturer Package Code | 340BZ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | FAST SWITCHING | |
| Avalanche Energy Rating (Eas) | 1400 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 36 A | |
| Drain-source On Resistance-Max | 0.09 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 294 W | |
| Pulsed Drain Current-Max (IDM) | 144 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FQA36P15 Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device.
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Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor junction temperature and adjust the system design accordingly.
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Monitor the device's junction temperature, drain-source voltage, and current. Implement over-temperature, over-voltage, and over-current protection mechanisms to prevent damage.
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Yes, but ensure the PCB layout is optimized for high-frequency operation, and consider using a gate driver with a low output impedance to minimize ringing and oscillations.
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Choose a gate resistor value that balances switching speed and oscillation prevention. A value between 10 ohms and 100 ohms is typical, but consult the gate driver datasheet and application notes for specific guidance.