Datasheets
FQA160N08 by:

Power MOSFET, N-Channel, QFET®, 80 V, 160 A, 7 mΩ, TO-3P, TO-3P-3L, 450-TUBE

Part Details for FQA160N08 by onsemi

Results Overview of FQA160N08 by onsemi

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

FQA160N08 Information

FQA160N08 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FQA160N08

Part # Distributor Description Stock Price Buy
DISTI # 82C3900
Newark Transistor, mosfet, n-Channel,80V V(Br)Dss,160A I(D),to-247Var Rohs Compliant: Yes |Onsemi FQA160N08 RoHS: Compliant Min Qty: 450 Package Multiple: 1 Date Code: 0 Container: Bulk 0
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DISTI # 88058772
Verical Trans MOSFET N-CH 80V 160A 3-Pin(3+Tab) TO-3P Tube Min Qty: 77 Package Multiple: 1 Date Code: 2101 Americas - 210
  • 77 $4.8750
  • 100 $4.6375
  • 500 $4.3875
  • 1,000 $4.1500
  • 10,000 $3.9000
$3.9000 / $4.8750 Buy Now
Rochester Electronics Power Field-Effect Transistor, 160A, 80V, 0.007ohm, N-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 210
  • 25 $3.9000
  • 100 $3.7100
  • 500 $3.5100
  • 1,000 $3.3200
  • 10,000 $3.1200
$3.1200 / $3.9000 Buy Now
DISTI # FQA160N08
Avnet Silica Trans MOSFET NCH 80V 160A 3Pin3Tab TO3PN Rail (Alt: FQA160N08) RoHS: Compliant Min Qty: 450 Package Multiple: 30 Lead time: 100 Weeks, 0 Days Silica - 0
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Part Details for FQA160N08

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FQA160N08 Part Data Attributes

FQA160N08 onsemi
Buy Now Datasheet
Compare Parts:
FQA160N08 onsemi Power MOSFET, N-Channel, QFET®, 80 V, 160 A, 7 mΩ, TO-3P, TO-3P-3L, 450-TUBE
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code TO-3P-3L
Package Description TO-3P, 3 PIN
Manufacturer Package Code 340BZ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 1600 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 160 A
Drain-source On Resistance-Max 0.007 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 375 W
Pulsed Drain Current-Max (IDM) 640 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

FQA160N08 Related Parts

FQA160N08 Frequently Asked Questions (FAQ)

  • The maximum junction temperature for the FQA160N08 is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.

  • To ensure proper biasing, make sure to provide a stable gate-source voltage (Vgs) between 2V to 5V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the gate current is limited to the recommended maximum value.

  • For optimal thermal performance, use a PCB with a thick copper layer (at least 2 oz) and a thermal relief pattern under the device. Ensure good thermal conductivity by using thermal vias and a heat sink if necessary. Keep the PCB layout compact and symmetrical to minimize parasitic inductance and capacitance.

  • To protect the FQA160N08 from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB has ESD protection circuits such as TVS diodes or ESD protection arrays. Also, use a conformal coating to protect the device from moisture and humidity.

  • The recommended gate resistor value for the FQA160N08 is typically between 10Ω to 100Ω, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) but may increase switching losses.

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