Part Details for FQA160N08 by onsemi
Results Overview of FQA160N08 by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FQA160N08 Information
FQA160N08 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FQA160N08
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
82C3900
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Newark | Transistor, mosfet, n-Channel,80V V(Br)Dss,160A I(D),to-247Var Rohs Compliant: Yes |Onsemi FQA160N08 RoHS: Compliant Min Qty: 450 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
88058772
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Verical | Trans MOSFET N-CH 80V 160A 3-Pin(3+Tab) TO-3P Tube Min Qty: 77 Package Multiple: 1 Date Code: 2101 | Americas - 210 |
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$3.9000 / $4.8750 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 160A, 80V, 0.007ohm, N-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 210 |
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$3.1200 / $3.9000 | Buy Now |
DISTI #
FQA160N08
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Avnet Silica | Trans MOSFET NCH 80V 160A 3Pin3Tab TO3PN Rail (Alt: FQA160N08) RoHS: Compliant Min Qty: 450 Package Multiple: 30 Lead time: 100 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for FQA160N08
FQA160N08 CAD Models
FQA160N08 Part Data Attributes
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FQA160N08
onsemi
Buy Now
Datasheet
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FQA160N08
onsemi
Power MOSFET, N-Channel, QFET®, 80 V, 160 A, 7 mΩ, TO-3P, TO-3P-3L, 450-TUBE
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-3P-3L | |
Package Description | TO-3P, 3 PIN | |
Manufacturer Package Code | 340BZ | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 1600 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 160 A | |
Drain-source On Resistance-Max | 0.007 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 375 W | |
Pulsed Drain Current-Max (IDM) | 640 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
FQA160N08 Frequently Asked Questions (FAQ)
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The maximum junction temperature for the FQA160N08 is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
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To ensure proper biasing, make sure to provide a stable gate-source voltage (Vgs) between 2V to 5V, and a drain-source voltage (Vds) within the recommended operating range. Also, ensure the gate current is limited to the recommended maximum value.
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For optimal thermal performance, use a PCB with a thick copper layer (at least 2 oz) and a thermal relief pattern under the device. Ensure good thermal conductivity by using thermal vias and a heat sink if necessary. Keep the PCB layout compact and symmetrical to minimize parasitic inductance and capacitance.
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To protect the FQA160N08 from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB has ESD protection circuits such as TVS diodes or ESD protection arrays. Also, use a conformal coating to protect the device from moisture and humidity.
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The recommended gate resistor value for the FQA160N08 is typically between 10Ω to 100Ω, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) but may increase switching losses.