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NPN Silicon Transistor, TO-220-3 FullPak, 1000-TUBE
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FJPF13007H2TU by onsemi is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
54AH8712
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Newark | Trans, Npn, 400V, 8A, 150Deg C, 40W Rohs Compliant: Yes |Onsemi FJPF13007H2TU RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 1043 |
|
$0.8490 / $1.5200 | Buy Now |
DISTI #
FJPF13007H2TU-ND
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DigiKey | TRANS NPN 400V 8A TO-220F-3 Min Qty: 1 Lead time: 10 Weeks Container: Tube |
12 In Stock |
|
$1.4300 | Buy Now |
DISTI #
FJPF13007H2TU
|
Avnet Americas | Trans GP BJT NPN 400V 8A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FJPF13007H2TU) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 111 Weeks, 0 Days Container: Tube | 0 |
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RFQ | |
DISTI #
512-FJPF13007H2TU
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Mouser Electronics | Bipolar Transistors - BJT NPN Sil Transistor RoHS: Compliant | 1733 |
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$0.6580 / $1.3300 | Buy Now |
DISTI #
FJPF13007H2TU
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TME | Transistor: NPN, bipolar, 400V, 8A, 40W, TO220FP Min Qty: 1 | 0 |
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$0.5220 / $0.7970 | RFQ |
DISTI #
FJPF13007H2TU
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Avnet Silica | Trans GP BJT NPN 400V 8A 3Pin3Tab TO220F Rail (Alt: FJPF13007H2TU) RoHS: Compliant Min Qty: 2000 Package Multiple: 50 Lead time: 11 Weeks, 0 Days | Silica - 950 |
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Buy Now | |
DISTI #
FJPF13007H2TU
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EBV Elektronik | Trans GP BJT NPN 400V 8A 3Pin3Tab TO220F Rail (Alt: FJPF13007H2TU) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 11 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 400V 40W 82A5V 8A NPN TO-220F-3 Bipolar (BJT) ROHS | 2 |
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$0.7981 / $1.3986 | Buy Now |
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FJPF13007H2TU
onsemi
Buy Now
Datasheet
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Compare Parts:
FJPF13007H2TU
onsemi
NPN Silicon Transistor, TO-220-3 FullPak, 1000-TUBE
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-220-3 FullPak | |
Package Description | TO-220F, 3 PIN | |
Manufacturer Package Code | 221AT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 111 Weeks | |
Samacsys Manufacturer | onsemi | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 8 A | |
Collector-Emitter Voltage-Max | 400 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 26 | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 40 W | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 4 MHz |
This table gives cross-reference parts and alternative options found for FJPF13007H2TU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FJPF13007H2TU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
FJPF13007H2TTU | Fairchild Semiconductor Corporation | Check for Price | Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN | FJPF13007H2TU vs FJPF13007H2TTU |
FJPF13007H2 | onsemi | Check for Price | Small Signal Bipolar Transistor | FJPF13007H2TU vs FJPF13007H2 |
FJPF13007H2 | Fairchild Semiconductor Corporation | Check for Price | Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN | FJPF13007H2TU vs FJPF13007H2 |
A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure good airflow and avoid thermal hotspots.
Use a reflow soldering process with a peak temperature of 240°C to 250°C. Avoid wave soldering and minimize exposure to moisture.
Implement EOS protection circuits, such as TVS diodes or zener diodes, and ensure proper PCB layout and routing to minimize parasitic inductance.
Store the device in a dry, cool place, away from direct sunlight. Handle the device by the body, avoiding touching the pins or die. Use anti-static packaging and follow ESD precautions.