Datasheets
FJPF13007H2TU by:

Power Bipolar Transistor

Part Details for FJPF13007H2TU by Fairchild Semiconductor Corporation

Results Overview of FJPF13007H2TU by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

FJPF13007H2TU Information

FJPF13007H2TU by Fairchild Semiconductor Corporation is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for FJPF13007H2TU

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FJPF13007H2TU Part Data Attributes

FJPF13007H2TU Fairchild Semiconductor Corporation
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FJPF13007H2TU Fairchild Semiconductor Corporation Power Bipolar Transistor
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220F
Package Description TO-220F, 3 PIN
Pin Count 3
Manufacturer Package Code TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection ISOLATED
Collector Current-Max (IC) 8 A
Collector-Emitter Voltage-Max 400 V
Configuration SINGLE
DC Current Gain-Min (hFE) 26
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 4 MHz

FJPF13007H2TU Related Parts

FJPF13007H2TU Frequently Asked Questions (FAQ)

  • Fairchild recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat. A minimum of 2oz copper thickness is recommended.

  • Ensure proper heat sinking, use a thermal interface material (TIM) between the device and heat sink, and follow Fairchild's recommended thermal design guidelines. Also, consider derating the device's power handling at high temperatures.

  • Although not explicitly stated in the datasheet, Fairchild recommends limiting the gate voltage to ±20V to prevent damage to the internal gate oxide.

  • Yes, but be aware that the FJPF13007H2TU has a relatively high gate charge (Qg) and output capacitance (Coss), which may affect switching performance at high frequencies. Ensure proper gate drive design and consider using a gate driver with a high current capability.

  • Fairchild recommends using a human-body model (HBM) ESD protection circuit with a minimum of 2kV rating. Additionally, follow proper handling and storage procedures to prevent ESD damage.

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