Part Details for FGH50T65UPD by onsemi
Results Overview of FGH50T65UPD by onsemi
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
FGH50T65UPD Information
FGH50T65UPD by onsemi is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FGH50T65UPD
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
63W2874
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Newark | 650V, 50A, Field Stop Trench Igbt/ Tube |Onsemi FGH50T65UPD RoHS: Not Compliant Min Qty: 450 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$3.6100 / $3.7100 | Buy Now |
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DISTI #
FGH50T65UPD-ND
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DigiKey | IGBT TRENCH FS 650V 100A TO-247 Min Qty: 1 Lead time: 15 Weeks Container: Tube |
223 In Stock |
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$3.2164 / $7.6200 | Buy Now |
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DISTI #
FGH50T65UPD
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Avnet Americas | Trans IGBT Chip N-CH 650V 100A 3-Pin TO-247 Tube - Rail/Tube (Alt: FGH50T65UPD) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
|
$3.1767 / $3.4772 | Buy Now |
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DISTI #
512-FGH50T65UPD
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Mouser Electronics | IGBTs 650 V 100 A 240 W RoHS: Compliant | 110 |
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$3.2100 / $7.2800 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant | 0 |
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$3.1900 / $6.6600 | Buy Now |
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DISTI #
85983106
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Verical | Trans IGBT Chip N-CH 650V 100A 340W 3-Pin(3+Tab) TO-247 Tube Min Qty: 90 Package Multiple: 1 Date Code: 2201 | Americas - 556 |
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$3.3750 / $4.2125 | Buy Now |
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Rochester Electronics | Insulated Gate Bipolar Transistor, 100A, 650V, N-Channel, TO-247AB RoHS: Not Compliant Status: Not Recommended for New Designs Min Qty: 1 | 556 |
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$2.7000 / $3.3700 | Buy Now |
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DISTI #
FGH50T65UPD
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TME | Transistor: IGBT, 650V, 50A, 170W, TO247-3 Min Qty: 1 | 0 |
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$4.4600 / $6.7000 | RFQ |
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DISTI #
FGH50T65UPD
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Richardson RFPD | POWER IGBT TRANSISTOR RoHS: Compliant Min Qty: 450 | 0 |
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$3.2200 | Buy Now |
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DISTI #
FGH50T65UPD
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Avnet Asia | Trans IGBT Chip N-CH 650V 100A 3-Pin TO-247 Tube (Alt: FGH50T65UPD) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 15 Weeks, 0 Days | 0 |
|
$3.0272 / $3.3857 | Buy Now |
Part Details for FGH50T65UPD
FGH50T65UPD CAD Models
FGH50T65UPD Part Data Attributes
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FGH50T65UPD
onsemi
Buy Now
Datasheet
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Compare Parts:
FGH50T65UPD
onsemi
650V, 50A, Field Stop Trench IGBT, TO-247-3, 450-TUBE
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-247-3 | |
| Manufacturer Package Code | 340CK | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 100 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 29 ns | |
| Gate-Emitter Thr Voltage-Max | 7.5 V | |
| Gate-Emitter Voltage-Max | 25 V | |
| JEDEC-95 Code | TO-247AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 340 W | |
| Rise Time-Max (tr) | 77 ns | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 185 ns | |
| Turn-on Time-Nom (ton) | 101 ns |
FGH50T65UPD Frequently Asked Questions (FAQ)
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A 2-layer or 4-layer PCB with a solid ground plane and a thermal relief pattern is recommended. Ensure a minimum of 1 oz copper thickness and a thermal pad size of at least 50 mm². Use thermal vias and a heat sink if possible.
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Use a robust power-on reset circuit, ensure a slow and controlled VCC ramp-up, and add a 10-100 nF decoupling capacitor between VCC and GND. Avoid overvoltage and ensure a stable power supply.
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The internal voltage regulator is set to 1.2 V by default. For optimal performance, adjust the VREG pin to the desired voltage (1.0-1.4 V) using an external resistor divider network. Consult the datasheet for specific calculations.
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Use a shielded enclosure, keep sensitive traces away from noisy signals, and add EMI filters or common-mode chokes as needed. Ensure proper grounding and decoupling, and follow onsemi's EMI/EMC guidelines.
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The FGH50T65UPD has a maximum junction temperature of 150°C. Ensure good airflow, use a heat sink if possible, and monitor the device temperature using the internal thermal sensor or an external thermistor.