Datasheets
FF800R17KP4_B2 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, N-Channel, MODULE-10

Part Details for FF800R17KP4_B2 by Infineon Technologies AG

Results Overview of FF800R17KP4_B2 by Infineon Technologies AG

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FF800R17KP4_B2 Information

FF800R17KP4_B2 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FF800R17KP4_B2

Part # Distributor Description Stock Price Buy
DISTI # 641-FF800R17KP4_B2
Mouser Electronics IGBT Modules IGBT 1700V 800A 0
  • 1 $1,024.6800
$1,024.6800 Order Now
Cytech Systems Limited   2
RFQ

Part Details for FF800R17KP4_B2

FF800R17KP4_B2 CAD Models

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FF800R17KP4_B2 Part Data Attributes

FF800R17KP4_B2 Infineon Technologies AG
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FF800R17KP4_B2 Infineon Technologies AG Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, N-Channel, MODULE-10
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-10
Pin Count 10
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 1200 A
Collector-Emitter Voltage-Max 1700 V
Configuration SEPARATE, 2 ELEMENTS
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-XUFM-X10
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 10
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 4850 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 1650 ns
Turn-on Time-Nom (ton) 790 ns
VCEsat-Max 2.2 V

Alternate Parts for FF800R17KP4_B2

This table gives cross-reference parts and alternative options found for FF800R17KP4_B2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FF800R17KP4_B2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FF800R17KF6CB2 Infineon Technologies AG Check for Price Insulated Gate Bipolar Transistor, 1300A I(C), 1700V V(BR)CES, N-Channel, MODULE-10 FF800R17KP4_B2 vs FF800R17KF6CB2
FF800R17KP4B2NOSA2 Infineon Technologies AG Check for Price Insulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES, N-Channel, MODULE-10 FF800R17KP4_B2 vs FF800R17KP4B2NOSA2

FF800R17KP4_B2 Related Parts

FF800R17KP4_B2 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FF800R17KP4_B2 is -40°C to 150°C.

  • To ensure reliability, it's essential to follow the recommended thermal management guidelines, such as using a heat sink, and ensuring good airflow around the device.

  • The recommended gate drive voltage for the FF800R17KP4_B2 is between 10V and 15V, with a maximum voltage of 20V.

  • To protect the FF800R17KP4_B2 from overvoltage and overcurrent, it's recommended to use a voltage regulator and a current limiter, such as a fuse or a current-sensing resistor.

  • The maximum allowed dv/dt for the FF800R17KP4_B2 is 10kV/μs, but it's recommended to limit it to 5kV/μs for reliable operation.

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